Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polymorphic indium tin oxide thin-membrane and production of polymorphic indium tin oxide electrode

A technology of indium tin oxide and a manufacturing method, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of increased cost, difficult control of film uniformity, reduced competitiveness of manufacturers, and the like, Achieve the effect of improving yield, shortening processing time, and optimizing film properties

Active Publication Date: 2006-03-15
E INK HLDG INC
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitation of the narrow irradiation area of ​​the laser beam itself, if it is used for large-area annealing, the uniformity of the formed film is still not easy to control
In addition, expensive laser annealing equipment also increases the cost of production, which will reduce the competitiveness of manufacturers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polymorphic indium tin oxide thin-membrane and production of polymorphic indium tin oxide electrode
  • Polymorphic indium tin oxide thin-membrane and production of polymorphic indium tin oxide electrode
  • Polymorphic indium tin oxide thin-membrane and production of polymorphic indium tin oxide electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0064] figure 1 It is a schematic flow chart of a manufacturing method of a polycrystalline indium tin oxide thin film in a preferred embodiment of the present invention, Figure 2A to Figure 2D It is a schematic cross-sectional flow diagram of a polycrystalline indium tin oxide film manufacturing method in a preferred embodiment of the present invention.

[0065] Such as figure 1 as well as Figure 2AAs shown, a substrate 210 is firstly provided (step 100 ), and before forming an ITO film, the substrate 210 is cleaned (step 110 ) to remove pollutants or particles on the substrate 210 . In this embodiment, the substrate 210 is, for example, a glass substrate, a silicon substrate, a plastic substrate, or other hard or soft substrates.

[0066] Next, if figure 1 as well as Figure 2B As shown, an amorphous ITO film 220 is formed on a substrate 210 (step 120). The method for forming the amorphous indium tin oxide film is, for example, physical vapor deposition or chemical v...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method of the indium-tin oxide film. First, form the amorphous indium-tin oxide film on the backing, then change it into the polycrystalline indium-tin oxide film by fast hot anneal. In addition, it also is provided a polycrystalline indium-tin oxide electrode. First, form the amorphous indium-tin oxide film on the backing, then make the wiring pattern on it, last to change it into the polycrystalline indium-tin oxide electrode by fast hot anneal.

Description

technical field [0001] The invention relates to a method for manufacturing an indium tin oxide thin film and a transparent electrode, and in particular to a method for manufacturing a polycrystalline indium tin oxide thin film and a polycrystalline indium tin oxide electrode. Background technique [0002] The display is the communication interface between people and information, and flat-panel displays are currently the development trend. Flat-panel displays mainly include the following types: organic electroluminescent displays, plasma displays, liquid crystal displays, and light-emitting diodes. Indium tin oxide transparent conductive film plays an important role in the above-mentioned displays. Indium tin oxide film is not only an excellent transparent electrode material, but also has different uses such as heat generation, heat reflection, electromagnetic wave shielding, and antistatic. Therefore, the indium tin oxide thin film can be widely used in different types of d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/58
Inventor 舒芳安
Owner E INK HLDG INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com