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Electronic beam exposure device

An electron beam exposure and exposure device technology, applied in circuits, discharge tubes, electrical components, etc., can solve the problems of not very promising, short wavelength, etc., and achieve the effect of less change in track pitch

Inactive Publication Date: 2006-03-15
HITACHT MAXELL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, in order to form a fine structure, a laser with a shorter wavelength and capable of continuous oscillation and optical components for this are required, but they are not yet very promising.

Method used

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  • Electronic beam exposure device
  • Electronic beam exposure device
  • Electronic beam exposure device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0056] FIG. 1 is a schematic configuration diagram of an electron beam exposure apparatus according to the present invention. An electron gun 2, a condenser lens (condenser lens) 4, a current control aperture 5, an irradiation lens 6, a shaping aperture 7, a projection lens 8, and a blanking electrode are sequentially built in the electron beam column holder 1 from above to below. 9. The deflection electrode 11, the focal length correction lens 12, and the objective lens 13. Furthermore, a rotary table 17 for fixing a circular substrate 16 , an X stage 19 , and an air spindle 21 are built in a chamber 22 . In order to avoid attenuation of electron beams, the insides of these electron beam column lens holders (column 1) and container 22 are kept vacuum by a vacuum exhaust system not shown in the figure. Usually, the electron beam column holder 1 and the container 22 have independent vacuum exhaust systems. Therefore, even if the container 22 is temporarily released to the atm...

Embodiment approach 2

[0080] In Embodiment 1 of the invention, the current density of the electron beam 3 is changed by driving the condensing lens 4 and the irradiating lens 6 in conjunction with each other, but in Embodiment 2 of the present invention, by driving the condensing lens 4 and the irradiating lens 6 The current density of the electron beam 3 is changed by moving the position of the current control window 5 while the excitation condition is kept constant.

[0081] The basic configuration of the electron beam exposure apparatus according to Embodiment 2 of the present invention is the same as that of the electron beam exposure apparatus according to Embodiment 1 of the present invention except that the shaping aperture 7 is not included. It has a movement mechanism to move the current control aperture 5 accurately in the direction of the optical axis. This moving mechanism can be realized by using a well-known mechanism such as a motor and a laser length measuring system. The current c...

Embodiment 1

[0089] Using the electron beam exposure apparatus 100 described in Embodiment 1 of the invention, a master for an optical disc was manufactured. First, a chemically amplified electron beam protective layer with a thickness of 80 nm was spin-coated on a silicon wafer, and a thin film was formed by heat treatment. The voltage applied to the electron gun 2 was fixed at 50KV. For the electron beam protective layer used, 8nA per 1m / s is the appropriate exposure amount. Therefore, when exposing the radius range from 20mm to 60mm at a speed of 600rpm, the range from 10.0nA to 30.1nA corresponds to an increase in the radius position the electron beam current. In addition, the setting tables of the focusing lens 4 and the irradiation lens 6 were created in advance every 1 nA, and interpolation was performed every 0.1 nA here. The track pitch is 160 nm, and the feed speed of the X stage 19 is continuous movement of about 1.6 μm / s. The exposure time is about 420 minutes.

[0090] The...

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PUM

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Abstract

The invention provides an electron bean exposure device which can restrain the alternation of the electron beans and a method for exposing the electron beans. The electron bean exposure device (100) of the invention exposes by irradiating the electron bean (3) in the state of a circular underlay (16) of a rotation forming protective layer (resist). The electron bean exposure device (100) is provided with a condensing lens (4) for focusing the electron bean (3) ejected by an electron gun (2), a current control aperture (5) for limiting the electron beans passing through the condensing lens (4), and an irradiation lens (6) for ensuring that the electron beans limited by the current control aperture (5) are parallel. Moreover, the current of the electron bean is controlled by changing the degree of condensation of the condensing lens (4) according to the irradiation position of the circular underlay (16).

Description

technical field [0001] The present invention relates to an electron beam exposure apparatus, an electron beam exposure method, a method of manufacturing a master disk of a disk, and a method of manufacturing a disk. Background technique [0002] In recent years, the demand for large-capacity recording media has been increasing, and the capacity of optical disks and hard disks has also increased. [0003] Here, an optical disk is produced in the following manner. First, grooves are formed on a substrate on which a protective layer is formed by exposing, etching, and cleaning to manufacture a master of an optical disc. Secondly, the optical disc master disc is used to make a mold for making the optical disc master disc. Then, a large number of optical disks are manufactured using the mold. [0004] Now, in the optical disc, a product with a diameter of 12cm and a capacity of 25GB has been developed. On this disc, pits and grooves are formed with a track pitch of 0.32 μm an...

Claims

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Application Information

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IPC IPC(8): G11B7/26H01J37/305
Inventor 藤田盐地近禅杉山寿纪井户宽
Owner HITACHT MAXELL LTD