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Dielectric structure

A dielectric structure and dielectric technology, applied in circuits, capacitors, printed circuits, etc., can solve the problems of reducing capacitor capacitance and dielectric constant

Inactive Publication Date: 2006-05-24
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the pore-forming material is removed, pores or voids, often containing air, form in the dielectric material, which results in an overall reduction in the dielectric constant of the multilayer dielectric material, which in turn reduces the capacitance of the capacitor

Method used

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  • Dielectric structure
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Barium acetate, Ba(CH 3 COO) 2 , (1mol) was dissolved in a mixed solution of 20mol ethanol, 25mol acetic acid and 1mol glycerol, and then the solution was stirred for 2hr. After stirring, 1 mol of Ti[O(CH 2 ) 3 CH 3 ] 4 added to the solution, and then stirred for another 2 hr to prepare a barium titanate sol.

[0069] A sample of this sol was spin-coated at 2000 rpm for 30 sec on a conductive copper-containing substrate. After spin-coating the solution, the sample was annealed at 170°C for 1 hr in a nitrogen atmosphere, followed by two consecutive annealing steps of 1 hr at 400°C and 1 hr at 700°C in air. The thickness of the annealed dielectric samples prepared using this procedure was ~100 nm.

[0070] To another sample of the sol, barium titanate (BaTiO 3 ) particles in sufficient quantity to provide 40% by volume. The dopant-containing sol was then applied to the dielectric surface of the annealed dielectric sample using the conditions disclosed above. The...

Embodiment 2

[0072] The dielectric structure of Example 1 was placed in a conventional electroless nickel plating bath to deposit a nickel electrode on the dielectric layer containing the dielectric dopant. The electroless nickel plated dielectric was then placed in a conventional nickel plated plating bath to increase the thickness of the nickel deposit.

Embodiment 3

[0074] The procedure of Example 2 was repeated except that the electrolessly nickel plated dielectric was placed in a conventional electrodeposited copper plating bath to deposit a copper layer over the electroless nickel layer.

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Abstract

A dielectric structure is disclosed that is particularly suitable for use in capacitors having a layer of dielectric material including a dopant that provides a positive profile. Methods of forming such dielectric structures are also disclosed. Such dielectric structures exhibit increased adhesion of subsequently applied conductive layers.

Description

technical field [0001] The present invention generally relates to the field of dielectric structures. In particular, the present invention relates to the field of dielectric structures suitable for use in capacitor fabrication. Background technique [0002] Laminated printed circuit boards and multi-chip modules are used as support substrates for electronic components such as integrated circuits, capacitors, resistors, inductors and other components. Conventionally, discrete passive components such as resistors, capacitors and inductors are surface mounted to printed circuit boards. Such surface mounted passive components occupy up to 60% or more of the real estate of the printed circuit board surface, thus limiting the space available for mounting active components such as integrated circuits. Removing passive components from the printed circuit board surface allows for increased active component density, further minimization of printed circuit boards, increased computing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/06H05K1/16
CPCH01G4/08H01G4/12H01G4/20H01L21/3115H01L28/82H05K1/162H05K3/181H05K2201/0175H05K2201/0195H05K2201/0209H05K2201/09509H01L27/02
Inventor M·A·勒扎尼卡
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC