Semiconductor device and method for manufacturing the same
A technology for semiconductors and devices, applied in the field of manufacturing the semiconductor devices, can solve problems such as the degradation of transistor characteristics
Inactive Publication Date: 2006-06-07
FUJITSU LTD
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Problems solved by technology
However, in this case, the aforementioned problem of impurity diffusion may occur, which may lead to degradation of transistor characteristics
Method used
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[0057] Preferred embodiments of the present invention will be described below with reference to the drawings, wherein like reference numerals refer to like elements throughout.
[0058] FIG. 1 shows the film formation mechanism of a carbon-oxynitride-containing silicon oxide film. FIG. 2 is a schematic partial cross-sectional view of a carbon-containing silicon oxynitride film formed on a semiconductor substrate.
[0059] As shown in Figure 1, under the following conditions, by thermal CVD, using BTBAS and oxygen (O 2 ) as a raw material, a carbon-containing silicon oxynitride film can be formed. The pressure in the film forming chamber is set at about 0.1 to about 1000 Pa, preferably about 5 to about 100 Pa. The film forming temperature is set to a low temperature condition of about 300 to about 650°C, preferably about 450 to about 580°C. The film forming time is set according to the pressure in the film forming chamber or the film forming temperature.
[0060] Further, d...
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Abstract
The present invention discloses a method of manufacturing a semiconductor device provided with a sidewall layer having a high quality and a very good shape. The side wall layer on the side wall of the gate electrode is formed using a silicon oxynitride film containing carbon. Such a film can be formed by a CVD method using BTBAS and oxygen as raw materials, in which the ratio of BTBAS flow rate / oxygen flow rate is appropriately set, and a low film formation temperature is set, for example, about 530°C. When such a film is used to form side wall layers, improvement in HF corrosion resistance and reduction in fringe capacitance can be achieved due to the action of nitrogen atoms and carbon atoms. Furthermore, when such a film is formed under low temperature conditions, unnecessary diffusion of impurities introduced into the semiconductor substrate can be suppressed. Therefore, transistor characteristics can be enhanced and stabilized, so that high performance and high quality of a semiconductor device can be realized.
Description
technical field [0001] The present invention relates to a semiconductor device and a method thereof. In particular, the present invention relates to a semiconductor device including a gate electrode and a sidewall provided on the gate electrode. The invention also relates to a method of manufacturing the semiconductor device. Background technique [0002] In a semiconductor device, a side wall layer is provided on a side wall of a gate electrode, and functions to electrically isolate the gate electrode and an impurity region in a transistor. The gate electrode is formed on a semiconductor substrate such as a silicon substrate. Impurity regions such as source / drain regions or extension regions are formed in the substrate. For the sidewall layer, an insulating silicon oxide film (mainly SiO 2 ) or silicon nitride film (mainly Si 3 N 4 ) or their laminated films. Heretofore, these films constituting the side wall layer were formed using a chemical vapor deposition (CVD) ...
Claims
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IPC IPC(8): H01L21/31H01L21/336H01L21/82H01L21/8234H01L27/088H01L29/78
CPCH01L21/28518H01L21/76837H01L21/76895H01L21/823814H01L21/823864H01L29/665H01L29/6653H01L29/6656H01L29/6659H01L29/7833H01L21/02115H01L21/02271H01L21/02211H01L21/0217H01L21/3145
Inventor 大田裕之大越克明森年史
Owner FUJITSU LTD