Semiconductor structure and manufacturing method theereof

Abstract

The present invention relates to a semiconductor structure and its manufacturing method. The manufacturing method includes the following steps: forming a mask layer on a substrate; forming an isolation region in the substrate to isolate an active region and a dummy active region. area; remove at least a portion of the mask layer in the active area to form a first opening, the first opening exposes the substrate; remove at least a portion of the mask layer in the dummy active area to form a second opening, the second The second opening exposes the substrate; and a selective epitaxial growth step is simultaneously performed on the substrate in the first opening and the second opening. With the introduction of the second opening, the epitaxial growth occurs in the second opening, and the pattern density is more uniform, so the pattern loading effect can be reduced.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit, and in particular to a semiconductor structure of a selective epitaxy process for the semiconductor integrated circuit and a manufacturing method thereof. Background technique [0002] In order to improve the properties of semiconductor integrated circuit devices, a selective epitaxial growth (SEG) process was developed, also known as selective epitaxial growth. The selective epitaxial growth process has been widely used in the fabrication of strained silicon, elevated source and drain, and shallow junctions. [0003] As is generally known in the art, in a selective epitaxial growth process, a single crystal semiconductor material (such as silicon or silicon germanium) is grown on exposed regions of the semiconductor layer and not on an insulating layer (such as an oxide layer and nitrogen oxide layer). layers). Therefore, the selective epitaxial growth process is different from the...

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Problems solved by technology

[0005] It can be seen that the above-mentioned existing semiconductor structure and its manufacturing method obviously still have inconvenience and defects in structure, method and use, and need to be further improved urgently.

In order to solve the problems existing in the semiconductor structure and its manufacturing method, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure for general products to solve the above problems , this is obviously a problem that relevant industry players are eager to solve

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