Electro-optical device, manufacturing method thereof, and electronic apparatus

Abstract

An electro-optical device having a pixel-switching thin film transistor disposed below the data lines on a substrate and a storage capacitor with a stacked structure of a high-potential electrode, a dielectric layer, and pixel-potential electrode that is disposed in an area including a region opposed to a channel region of the pixel-switching thin film transistor and disposed above the data lines. A pixel electrode is disposed above the storage capacitor for each pixel and a peripheral circuit is disposed in a peripheral area located around a pixel array area in which the pixels are arranged. The dielectric layer includes a non-opened area located between opened areas of the pixels. A peripheral dielectric layer area includes a region opposed to a channel region of a peripheral-circuit thin film transistor which is disposed below the storage capacitor and constitutes the peripheral circuit.

Description

technical field [0001] The present invention relates to the technical fields of electro-optical devices such as liquid crystal devices, their manufacturing methods, and electronic equipment such as liquid crystal projectors. Background technique [0002] Such an electro-optical device includes pixel electrodes, scanning lines for selectively driving the pixel electrodes, data lines, and a TFT (Thin Film Transistor, thin film transistor) as a pixel switching element on a substrate, and is configured to be capable of Perform active matrix driving. In addition, for the purpose of high contrast, etc., a storage capacitor may be provided between the TFT and the pixel electrode. The above constituent elements are fabricated at high density on a substrate to achieve an improvement in the pixel aperture ratio, miniaturization of the device, etc. (for example, refer to Patent Document 1). [0003] As described above, electro-optical devices are required to further improve display q...

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Problems solved by technology

[0008] However, if the above-mentioned various conventional technologies are adopted, the multilayer structure on the substrate will basically be highly complicated with the increase in functionality and performance.

This further leads to high complication of the manufacturing method, reduction of manufacturing yield, etc.

Conversely, if the laminated structure and manufacturing process on the substrate are simplified, there may be a reduction in the light-shielding performance, especially deterioration caused by moisture and moisture in the TFTs constituting the pixels and peripheral circuits, and Technical problem of degradation of display quality due to degradation of image signal accompanying this

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