Conductive non-polarized composite gallium nitride substrate lining and production method

A gallium nitride based, non-polarized technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of current congestion, heat dissipation of high-power devices, uneven current distribution, etc., and achieve the effect of high heat conduction efficiency

Inactive Publication Date: 2006-10-25
金芃 +1
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device
(2) Sapphire is a material with low thermal conductivity, and the heat dissipa

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductive non-polarized composite gallium nitride substrate lining and production method
  • Conductive non-polarized composite gallium nitride substrate lining and production method
  • Conductive non-polarized composite gallium nitride substrate lining and production method

Examples

Experimental program
Comparison scheme
Effect test

example

[0047] The first specific implementation example of the process flow step 112: using MOCVD, grow a layer of gallium nitride substrate with a thickness between 1 nm and 90 nm on the r-plane sapphire growth substrate (at a temperature of 400-900 ° C). Nucleation layer. The material of the crystal nucleus layer includes, but is not limited to, gallium nitride. An a-plane non-polarized first GaN-based epitaxial layer is grown on the crystal nucleus layer. A specific implementation example of growing a non-polarized a-plane first gallium nitride-based epitaxial layer: growing a non-polarized a-plane at a temperature above about 1000° C. and at a pressure less than 1 atmosphere, with an appropriate V / III ratio The thickness of the first GaN-based epitaxial layer is 1-5 microns.

[0048] A second specific implementation example of process flow step 112: using MBE, grow an aluminum nitride buffer layer on an m-plane 6H-silicon carbide growth substrate, and then grow an m-plane first...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention discloses a conductive non-polar compound GaN substrate and a production method, in which, the conductive reflection/ohm/stress buffer layer is laminated between the conductive support substrate and the non-polar GaN epitaxial layer, the production method includes: growing an intermediate layer(or germ layer) and a non-polar first GaN epitaxial layer orderly on the growing substrate, laminating a mask layer, etching the mask layer to form a GaN window and mask layer strips, growing a conductive second GaN epitaial layer, laminating the conductive reflection/ohm/stress buffer layer, bonding the support substrate, peeling off the growing substrate, the intermediate layer, the first epitaxial layer, the mask layer and the second epitaxial layer with cavities to be heat-processed.

Description

technical field [0001] The invention discloses a conductive non-polarized (non-polar) compound gallium nitride base substrate, which belongs to the technical field of semiconductor electronics. Background technique [0002] In industry, c-sapphire substrate is used as one of the main growth substrates for growing GaN-based devices (including GaN-based LEDs). However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device. (2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved. (3) GaN-based LEDs with lateral structures have disadvantages such as current crowding and uneven current distribution. [0003] In order to overcome the above shortcom...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/20H01L33/00H01L33/04H01L33/32
Inventor 彭晖彭一芳
Owner 金芃
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap