Conductive non-polarized composite gallium nitride substrate lining and production method

Abstract

This invention discloses a conductive non-polar compound GaN substrate and a production method, in which, the conductive reflection / ohm / stress buffer layer is laminated between the conductive support substrate and the non-polar GaN epitaxial layer, the production method includes: growing an intermediate layer(or germ layer) and a non-polar first GaN epitaxial layer orderly on the growing substrate, laminating a mask layer, etching the mask layer to form a GaN window and mask layer strips, growing a conductive second GaN epitaial layer, laminating the conductive reflection / ohm / stress buffer layer, bonding the support substrate, peeling off the growing substrate, the intermediate layer, the first epitaxial layer, the mask layer and the second epitaxial layer with cavities to be heat-processed.

Description

technical field [0001] The invention discloses a conductive non-polarized (non-polar) compound gallium nitride base substrate, which belongs to the technical field of semiconductor electronics. Background technique [0002] In industry, c-sapphire substrate is used as one of the main growth substrates for growing GaN-based devices (including GaN-based LEDs). However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device. (2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved. (3) GaN-based LEDs with lateral structures have disadvantages such as current crowding and uneven current distribution. [0003] In order to overcome the above shortcom...

AI Technical Summary

Problems solved by technology

However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device

(2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved

(3) GaN-based LEDs with lateral structures have disadvantages such as crowding and uneven current distribution.

[0004] However, the disadvantage of the lateral epitaxy method in scheme (1) is that there are voids in the gallium nitride-based epitaxial layer, which is easy to deform at high temperature, and the device is easy to be broken down, etc.

Images