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Micro gap method and ESD protection device

A component, spark gap technology, applied in the field of micro-gap methods and electrostatic discharge protection devices, can solve the problem that the breakdown voltage cannot provide sufficient protection, plague laser technology, and hinder economical commercial products, etc.

Inactive Publication Date: 2006-11-08
AGILENT TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the trick will be to be able to reliably make such small spark gaps in product tuning
[0010] The typical breakdown voltage of 1.5KV to 2KV currently used for conventional spark gaps often does not provide adequate protection
In addition, the tight tolerances required to fabricate smaller gaps are difficult or impossible to maintain with photolithography, and various problems have plagued laser technology to date, preventing the economical use of cutting smaller gaps in metal traces. of commercial products

Method used

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  • Micro gap method and ESD protection device
  • Micro gap method and ESD protection device
  • Micro gap method and ESD protection device

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Embodiment Construction

[0018] now refer to figure 1 , where a simplified example 1 of a prior art spark gap structure fabricated by photolithography on a substrate 2 is shown. The metal signal trace 3 passes near the metal ground trace 4 which also has a raised portion 5 . Protrusion 5 approaches trace 3 creating gap 6, which is an actual spark gap of about 2 mil (0.002 inches). It should be understood that this situation is only schematically depicted, and that the roles of the signal and ground traces may be reversed, and each may have protruding portions proximate to the other. On the other hand, at high frequencies the bump may appear as an annoying lumped constant, and the designer may prefer to keep their signal traces "bump free" and place a single bump in the ground trace part.

[0019] However, those familiar with the art should understand that it is not possible to control the process parameters closely enough to reliably produce much narrower spark gaps. In addition, the definition of...

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Abstract

ESD events on a hybrid circuit are suppressed with a high performance spark gap cut in a metal trace with a suitable laser micro machining technique. The trace can be carried by a conventional printed circuit board (using FR4), or a ceramic substrate. Gap size is reduced by flushing the cut with a flow of gas that removes the vaporized copper and prevents it from re-depositing upon the cut surfaces and bridging them. The gap can be as narrow as 0.4 mils (0.0004 inches) and can have very well defined features that include sharp corners that assist in lowering the breakdown voltage. In addition, dielectric material below and off to either side of the trace that would otherwise adjoin the metallic gap can also be removed, which lowers breakdown voltage and decreases capacitance across the gap. Breakdown voltages as low as 300 V can be achieved. Such a spark gap is used at the probe tip of an active oscilloscope probe to protect the delicate circuitry therein.

Description

technical field [0001] The invention relates to a micro-gap method and an electrostatic discharge protection device. Background technique [0002] Active probe assemblies for high-frequency oscilloscopes require a small form factor, for reasons such as the wavelength of the highest frequency in the "oscilloscope's" bandwidth. Therefore, the coupling and matching network that connects the tip(s) of the actual probe to the input(s) of the preamplifier often has a low profile. The resistive elements in these coupling and matching networks are considerably limited in their ability to dissipate energy and, in addition to thermal effects, can experience significant permanent changes in value due to exposure to electrostatic stress. [0003] In addition, the active devices in this probe assembly are typically found in integrated semiconductor amplifier assemblies, which are often susceptible to damage and destruction from ESD, or electrostatic discharge (i.e., they can be "zapped"...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R1/067B23K26/00B23K26/142B23K26/38G01R1/36
CPCH01L27/0248H01T4/08
Inventor 迈克尔·T·麦克提格詹姆斯·E·坎农
Owner AGILENT TECH INC