Multilayer mirror, method for manufacturing the same, and exposure equipment

A multi-layer film and reflector technology, which is applied in photolithography exposure devices, microlithography exposure equipment, semiconductor/solid-state device manufacturing, etc., can solve problems such as failure to reach
CN1868033AInactive Publication Date: 2006-11-22NIKON CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NIKON CORP
Publication Date
2006-11-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

A multilayer film reflection mirror intended to reduce the dependency of reflectance on an incident angle. A substrate (1) is made of a low-thermal-expansion glass polished until its surface (top surface in the FIG.) has a roughness of up to 0.2 nmRMS. An Ru / Si multilayer film (3) having the large half width of peak reflectance is formed on the surface of the substrate (1), and an Mo / Si multilayer film (5) having a high peak reflectance is formed on this Ru / Si multilayer film (3). Accordingly, a reflectance peak having a higher reflectance than the case with of Ru / Si only and a larger half width than the case with of Mo / Si multilayer film (5) only is obtained. Since Ru provides a larger EUV beam absorption than Mo, a higher reflectance than with the case of a structure in which the Ru / Si multilayer film (3) is formed on the Mo / Si multilayer film (5) is obtained. Since a multilayer film having a larger half width at a spectral reflectance has a smaller dependency of reflectance on an angle, the invention can keep a high imaging performance in a projection optical system.
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Description

technical field

[0001] The present invention relates to multilayer mirrors and the like used in EUV lithography, and more particularly, to techniques for reducing the dependence of reflectance on the surface of the mirror on the incident angle. Background technique

[0002] At present, as a method of manufacturing semiconductor integrated circuits, reduced projection exposure capable of achieving a high processing speed is widely used. In this reduced projection technique, as semiconductor integrated circuit devices become finer, a projection lithography technique using soft X-rays having a wavelength of about 11 to 14 nm instead of ultraviolet rays has been developed (see Non-Patent Document 1). Recently, this technique is also referred to as EUV (Extreme Ultraviolet, Soft X-ray) lithography. The EUV lithography technology is expected to be a technology having a resolution of 45 nm or less, which is impossible with conventional lithography technology (wavelength of about 1...

Claims

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