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Perovskite oxide thin-film compound device

An oxide thin film and perovskite technology, applied in the field of perovskite oxide thin film composite devices, can solve problems such as being only suitable for large magnetic fields and low temperatures, and achieve the effect of excellent performance

Inactive Publication Date: 2006-11-29
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the defect that the existing perovskite oxide devices are only suitable for larger magnetic fields and low temperatures in practical applications, thereby providing a series of devices that can realize the current / voltage induced resistance effect at room temperature and low magnetic field Perovskite Oxide Thin Film Composite Devices

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Embodiment 1

[0034] Example 1. Preparation of the first perovskite oxide thin film composite device I-1

[0035] The first perovskite oxide thin film composite device I-1 provided by the present invention has a core structure as follows: figure 1 Shown in (1), it comprises: a MgO base substrate 5, on which a thickness of 2000nm perovskite oxide La is deposited. 0.1 Ca 0.9 MnO 3 The thin film layer 4, wherein the middle part of the thin film layer is a columnar junction area, and the two ends are the bottom electrode 1, that is, the lead-out end.

[0036] This composite device is realized through the following process: choose a MgO substrate as the substrate, and deposit a 2000nm-thick perovskite oxide monolayer film La by molecular beam epitaxy. 0.1 Ca 0.9 MnO 3 , and then use deep ultraviolet exposure to etch into a strip shape, and its two ends are used as lead-out ends, that is, the bottom electrode (0.5×0.5mm 2 ), middle part 0.2×2mm 2 It is the core part of the device, that is,...

Embodiment 2

[0038] Example 2. Preparation of the first perovskite oxide thin film composite device I-2

[0039] By the method in embodiment 1, with the La of 100nm 0.5 Ca 0.5 MnO 3 Instead of 2000nm La 0.1 Ca 0.9 MnO 3 .

Embodiment 3

[0040] Example 3, Preparation of the first perovskite oxide thin film composite device I-3

[0041] By the method in Example 1, with 1nm La 0.9 Ca 0.1 MnO 3 Instead of 2000nm La 0.1 Ca 0.9 MnO 3 .

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Abstract

A component composed by perovskite oxide film is prepared by core structure of peroskite oxide layer as perovskite oxide being RE-X TM X MnO3 with RE being La or / and Pr, Nb or Y; Tm being Sr or Ca and O being less than X being less than 1.0. The composed component can be used on various transducers, switch of self-rotation valve, storage unit of random access storage and some other self-rotation electronic elements.

Description

technical field [0001] The invention relates to a series of perovskite oxide thin film composite devices, in particular to a series of perovskite oxide thin film composite devices which can realize current / voltage induced resistance effect at room temperature and low magnetic field. Background technique [0002] The chemical formula of perovskite oxides is R E1-x T MX MnO 3 , where R E is a rare earth element, T M For divalent alkaline earth metals. Since 1993, people have studied the perovskite oxide La 2 / 3 Ba 1 / 3 MnO 3 Since the Colossal Magnetoresistance (CMR) effect was observed in single-layer films, a series of perovskite oxide single-layer films and composite multilayer films have been extensively and systematically studied. It is found that this kind of perovskite oxide has rich and diverse condensed matter physical properties, such as ferromagnetism, antiferromagnetism, paramagnetism, insulator, metallic properties, etc., as well as its huge magnetoresistanc...

Claims

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Application Information

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IPC IPC(8): G11C11/14H01L27/22H01L43/08G11B5/31
Inventor 丰家峰赵昆赵见高吕惠宾韩秀峰詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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