Thin film transistor controlled thin film field emission display device
A technology of thin-film transistors and display devices, which is applied in the field of vacuum electron emission flat panel displays, can solve problems such as excessive running current, achieve cost reduction, save process time, and overcome the effects of excessive running current
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Embodiment 1
[0030] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chromium-copper-chromium (Cr-Cu-Cr) row electrodes 31 and gates 37 of the triode thin film transistor on the glass, and complete at one time. An insulating layer 310 is deposited, and the material is silicon nitride. The dielectric isolation layer 312 between the row electrodes and the column electrodes and the ground electrodes is made by screen printing method, and the material is low-melting point glass. Make the Cr-Cu-Cr column electrode 32, the ground electrode 33, the source electrode 38 and the drain electrode 39 of the tripolar type thin film transistor, the electron injection electrode 34 in the dipolar type thin film field emission cathode, the electron extraction electrode 35, etc., complete at one time . A zinc oxide semiconductor thin film 311 is deposited between the source and drain electrodes of the triode thin film transistor, with a ...
Embodiment 2
[0032] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chromium-copper-chromium (Cr-Cu-Cr) row electrodes 31 and gates 37 of the triode thin film transistor on the glass, and complete at one time. An insulating layer 310 is deposited, and the material is tantalum pentoxide. The dielectric isolation layer 312 between the row electrodes and the column electrodes and the ground electrodes is made by screen printing method, and the material is low-melting point glass. Make the Cr-Cu-Cr column electrode 32, the ground electrode 33, the source electrode 38 and the drain electrode 39 of the tripolar type thin film transistor, the electron injection electrode 34 in the dipolar type thin film field emission cathode, the electron extraction electrode 35, etc., complete at one time . An indium oxide semiconductor thin film 311 is deposited between the source and drain electrodes of the triode thin film transistor, w...
Embodiment 3
[0034] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chrome-copper-chromium (Cr-Cu-Cr) row electrodes 31 (simultaneously as the grid 37 of the triode thin film transistor) on the glass, once Finish. An insulating layer 310 is deposited, and the material is silicon nitride. Make the Cr-Cu-Cr column electrode 32, the ground electrode 33, the source electrode 38 and the drain electrode 39 of the tripolar type thin film transistor, the electron injection electrode 34 in the dipolar type thin film field emission cathode, the electron extraction electrode 35, etc., complete at one time . A zinc oxide semiconductor thin film 311 is deposited between the source and drain electrodes of the triode thin film transistor, with a thickness of about 30 nanometers, and the resistance between the source and drain electrodes is on the order of megohms. A metal tin film is deposited between the electron injection electro...
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