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Thin film transistor controlled thin film field emission display device

A thin film transistor and display device technology, applied in the field of vacuum electron emission type flat panel display, can solve problems such as excessive row current, and achieve the effects of cost reduction, simple device structure and preparation process, and process processing time saving.

Inactive Publication Date: 2009-01-14
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It not only has the characteristics of simple structure, common materials, and simple processing technology, but the most important thing is to completely solve the problem of excessive running current in ordinary surface conduction emission display devices, so that the running current only includes a small capacitive current, reaching almost Negligible extent, which further reduces the high cost of the overall display and improves the reliability of the device

Method used

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  • Thin film transistor controlled thin film field emission display device
  • Thin film transistor controlled thin film field emission display device
  • Thin film transistor controlled thin film field emission display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chromium-copper-chromium (Cr-Cu-Cr) row electrodes 31 and gates 37 of the triode thin film transistor on the glass, and complete at one time. An insulating layer 310 is deposited, and the material is silicon nitride. The dielectric isolation layer 312 between the row electrodes and the column electrodes and the ground electrodes is made by screen printing method, and the material is low-melting point glass. Make the Cr-Cu-Cr column electrode 32, the ground electrode 33, the source electrode 38 and the drain electrode 39 of the tripolar type thin film transistor, the electron injection electrode 34 in the dipolar type thin film field emission cathode, the electron extraction electrode 35, etc., complete at one time . A zinc oxide semiconductor thin film 311 is deposited between the source and drain electrodes of the triode thin film transistor, with a ...

Embodiment 2

[0032] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chromium-copper-chromium (Cr-Cu-Cr) row electrodes 31 and gates 37 of the triode thin film transistor on the glass, and complete at one time. An insulating layer 310 is deposited, and the material is tantalum pentoxide. The dielectric isolation layer 312 between the row electrodes and the column electrodes and the ground electrodes is made by screen printing method, and the material is low-melting point glass. Make the Cr-Cu-Cr column electrode 32, the ground electrode 33, the source electrode 38 and the drain electrode 39 of the tripolar type thin film transistor, the electron injection electrode 34 in the dipolar type thin film field emission cathode, the electron extraction electrode 35, etc., complete at one time . An indium oxide semiconductor thin film 311 is deposited between the source and drain electrodes of the triode thin film transistor, w...

Embodiment 3

[0034] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chrome-copper-chromium (Cr-Cu-Cr) row electrodes 31 (simultaneously as the grid 37 of the triode thin film transistor) on the glass, once Finish. An insulating layer 310 is deposited, and the material is silicon nitride. Make the Cr-Cu-Cr column electrode 32, the ground electrode 33, the source electrode 38 and the drain electrode 39 of the tripolar type thin film transistor, the electron injection electrode 34 in the dipolar type thin film field emission cathode, the electron extraction electrode 35, etc., complete at one time . A zinc oxide semiconductor thin film 311 is deposited between the source and drain electrodes of the triode thin film transistor, with a thickness of about 30 nanometers, and the resistance between the source and drain electrodes is on the order of megohms. A metal tin film is deposited between the electron injection electro...

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Abstract

The related TFT-control thin-film field-emissive display (TFFED) comprises: a ground electrode on the cathode plate paralleled to the column electrodes, as well as a tripolar TFT connected to a bipolar TFFE cathode with an electron injection / extraction electrode and an electron conductive emission layer between electrodes, which composes by a grid / drain / source connected to a row / column / ground electrode respectively, an insulation layer between the grid plane and the plane with drain and source, and a semi-conductive thin-film. This invention overcomes the problem of large current in prior art, reduces process time, and fit to large-scale production.

Description

technical field [0001] The invention relates to a thin film field emission flat panel display device, in particular to a thin film field emission display device controlled by a thin film transistor, and belongs to the technical field of vacuum electron emission flat panel display. technical background [0002] Recently, the development of flat panel display device (FPD) is advancing by leaps and bounds, and there is a tendency to replace the traditional cathode ray tube (CRT). The mainstream flat panel displays currently on the market include Liquid Crystal Displays (LCDs), Plasma Displays (PDPs) and a small number of small-sized Organic Light Emitting Diode Displays (OLEDs). As a field emission display (FED) similar to CRT's light-emitting principle, its development is limited due to various reasons. Since FED has unique advantages in display performance, research and development have not stopped. Since 2004, the surface conduction emission display device developed by Can...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J31/12H01J29/00H01J29/02H01J29/04H01J29/46H01J29/96
Inventor 李德杰
Owner TSINGHUA UNIV
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