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Grid controlled thin film field emission display device

A display device and field emission technology, which is applied in the directions of image/graphic display tubes, control electrodes, electrical components, etc., can solve problems such as excessive line current, achieve cost reduction, simple device structure and preparation process, and save process processing time. Effect

Inactive Publication Date: 2008-09-10
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The present invention aims at the deficiencies and shortcomings of surface conduction field emission displays in the prior art, and provides a gate-controlled thin film field emission display device, thereby completely solving the problem of excessive running current in common surface conduction emission display devices

Method used

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  • Grid controlled thin film field emission display device
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  • Grid controlled thin film field emission display device

Examples

Experimental program
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Embodiment 1

[0031] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chromium-copper-chromium (Cr-Cu-Cr) row electrodes 31 and grids 36 on the glass, which is completed at one time. An insulating layer 38 is deposited, and the material is silicon nitride. The dielectric isolation layer 39 between the row electrode, the column electrode and the ground electrode is made by screen printing method, and the material is low-melting point glass. The Cr-Cu-Cr column electrode 32, the ground electrode 33, the source electrode 35 and the drain electrode 34 are fabricated in one operation. Evaporate a layer of metal indium between the source and drain electrodes, with a thickness of about 10 nanometers, and then conduct thermal oxidation to obtain an undulating indium oxide film, which is the semiconductor electron conduction emission layer 37 . The resistance between the source and drain electrodes is on the order of 10 megohms....

Embodiment 2

[0033] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chromium-copper-chromium (Cr-Cu-Cr) row electrodes 31 and grids 36 on the glass, which is completed at one time. The dielectric isolation layer 39 between the row electrode, the column electrode and the ground electrode is made by screen printing method, and the material is low-melting point glass. An insulating layer 38 is deposited, and the material is silicon nitride. A layer of bismuth and magnesium alloy film is deposited by sputtering at the position of the gate. The substrate temperature is controlled at about 150 degrees during deposition, and then thermally oxidized into a bismuth-magnesium oxide film to form the lower oxide film of the electron conduction emission layer. A layer of zinc oxide semiconductor film with a thickness of 10 nanometers is deposited on it, and bismuth magnesium oxide and zinc oxide together form the electron conductio...

Embodiment 3

[0035] First make the cathode substrate, clean the cathode substrate glass 30 with a conventional cleaning procedure, and make chromium-copper-chromium (Cr-Cu-Cr) row electrodes 31 and grids 36 on the glass, which is completed at one time. The dielectric isolation layer 39 between the row electrode, the column electrode and the ground electrode is made by screen printing method, and the material is low-melting point glass. An insulating layer 38 is deposited, and the material is tantalum pentoxide. A layer of bismuth film is sputtered and deposited on the position of the gate. During deposition, the substrate temperature is controlled at about 150 degrees, and then thermally oxidized into a bismuth oxide film to form the lower oxide film of the electron conduction emission layer, and then a layer of bismuth is deposited on it. An indium oxide semiconductor thin film with a thickness of 10 nanometers, bismuth oxide and indium oxide together constitute the electron conduction an...

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Abstract

The related grid-control thin-film field-emissive display (GCTFFED) comprises: a ground electrode on the cathode plate paralleled to the column electrodes, and a field-emissive cathode with a tripolar GCTFFE cathode, which composes by a grid / drain / source connected to a row electrode, a column electrode and a ground electrode respectively, an electron conductive emission layer between the source and drain, and an insulation layer between the grid and last layer. This invention overcomes the problem of large current in prior art, reduces process time, and fit to large-scale production.

Description

technical field [0001] The invention relates to a surface conduction field emission display, in particular to a gate control thin film field emission flat panel display device. The invention belongs to the technical field of vacuum electron emission flat panel display. technical background [0002] The current flat panel display technology market is dominated by liquid crystal displays (LCDs) and plasma displays (PDPs), which are gradually replacing traditional cathode ray tube (CRT) displays. From a technical point of view, there is basically no bottleneck restricting its development, and the pollution generated during the production process is very small, which will not pose environmental protection pressure. Considering the supply of required materials, the outlook is not so optimistic, and the problem of resource depletion needs to be paid enough attention. Since the above two displays require transparent conductive film (TCF), and the transparent conductive film widel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J31/12H01J29/02H01J29/04H01J1/304H01J1/46
Inventor 李德杰
Owner TSINGHUA UNIV
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