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Target assembly and sputtering device with target assembly

A technology of assembly and bonding surface, applied in the field of sputtering device and target assembly, can solve the problems of inability to form film, melting of bonding material, exudation, etc., and achieve the effect of preventing abnormal discharge and good film formation.

Active Publication Date: 2007-02-21
ULVAC INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in the above-mentioned sputtering device, in order to improve the utilization efficiency of each target, the magnet assembly is arranged behind the target. Between each target assembly, there is a problem that the joint surface of the target and the back plate is exposed to the plasma, so that the joint material melts and oozes out.
[0010] If the bonding material oozes out, it will cause abnormal discharge during sputtering, making it impossible to form a good film

Method used

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  • Target assembly and sputtering device with target assembly
  • Target assembly and sputtering device with target assembly
  • Target assembly and sputtering device with target assembly

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Embodiment approach 1

[0047] In this embodiment, using figure 1 In the shown sputtering apparatus, a glass substrate (1000 mm×1200 mm) is used as a processing substrate S, and the glass substrate is transported to a position facing the targets 31 a to 31 f by a substrate transport unit. Using Al as the targets 31a-31f, each target 31a-31f is made into a cuboid with an external dimension of 200mm×1700mm and a thickness of 10mm by a known method, and is respectively bonded to the back plates 32a-32f as a target assembly.

[0048] At this time, using In as the bonding material, when installing the target assemblies 31 and 32 on the cathode assembly 3, the distance D1 between the targets 31a to 31f is set to 2 mm, and the distances D2 and D3 between the back plates are set to 10 mm. . Moreover, the distance between target 31a-31f and a glass substrate was set to 160 mm.

[0049] As sputtering conditions, the pressure in the evacuated vacuum chamber 11 was maintained at 0.3 Pa, and the mass flow contr...

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Abstract

This invention provides a target assembly which is made by jointing a target with a backing plate through a bonding material, but makes the jointed surface between the target and the backing plate not to be exposed to plasma when the target assembly is sputtered, and consequently prevents overdischarge from occurring while the target assembly is sputtered. This target assembly makes an area of the jointed surface between the targets 31a to 31f to be sputtered having a predetermined shape and the backing plates 32a to 32f smaller than the maximum cross sectional area of the target.

Description

technical field [0001] The present invention relates to a target assembly obtained by bonding a target and a back plate, and a sputtering apparatus including the target assembly. Background technique [0002] In the sputtering method, ions in the plasma are accelerated and impacted on a target formed into a predetermined shape according to the composition of the film to be formed on the surface of the substrate to be processed, and target atoms are scattered to form a thin film on the surface of the substrate to be processed. . At this time, since the temperature of the target becomes high due to the impact of the ions, there are problems such as melting of the target and occurrence of cracks. [0003] Therefore, the target assembly is made by bonding the target to, for example, a copper back plate with a bonding material made of a material with high thermal conductivity such as indium or tin, and is mounted on the sputtering cathode in this state to form a target assembly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/34H01L21/67207F04D17/168C23C14/14H01F7/02H01L21/02631
Inventor 大石祐一小松孝中村肇新井真清田淳也谷典明
Owner ULVAC INC
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