Nitride semiconductor vertical cavity surface emitting laser

A technology of vertical cavity surface emission and nitride semiconductor, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of limiting optical gain performance, and achieve the effects of low heat generation, high optical gain performance, and low voltage drop

Inactive Publication Date: 2007-02-21
AVAGO TECH ECBU IP (SINGAPORE) PTE LTD
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This situation limits the optical gain performance that can be obtained

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride semiconductor vertical cavity surface emitting laser
  • Nitride semiconductor vertical cavity surface emitting laser
  • Nitride semiconductor vertical cavity surface emitting laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] In the following description, similar reference numerals are used to designate similar elements. Moreover, the drawings are intended to show major configurations of exemplary embodiments in diagrammatic form. The drawings are not intended to depict every configuration of actual embodiments and the relative dimensions of the depicted elements are not drawn to scale.

[0012] As used herein, the term "nitride semiconductor material" refers to a nitrogen-containing Group III-IV semiconductor material. Exemplary nitride semiconductor materials include gallium nitride (GaN), indium gallium nitride (InGaN), indium nitride (InN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), aluminum indium gallium nitride ( AlInGaN), gallium arsenide nitride (GaAsN), indium gallium arsenide nitride (InGaAsN), aluminum gallium arsenide nitride (AlGaAsN), gallium phosphide nitride (GaPN), indium gallium phosphide nitride (InGaPN) and aluminum gallium phosphonitride compound (AlGaP...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a vertical cavity surface-emitting laser (VCSEL). The VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.

Description

technical field [0001] The invention relates to a nitride semiconductor vertical cavity surface emitting laser. Background technique [0002] A VCSEL is a laser device formed from an optically active semiconductor region sandwiched between a pair of highly reflective mirror stacks, which may be formed from several layers of metallic material, dielectric material, or epitaxially grown semiconductor material. Recently, various efforts have been made to extend the operating wavelength of VCSEL devices to the shorter wavelength range of 200nm to 600nm (ie, the violet to red regions of the visible spectrum). Many nitride semiconductor materials (for example, GaN-based materials such as GaN, AlGaN, and AlInGaN) have bandgap energies corresponding to this wavelength range. For this reason, many efforts have been made to manufacture nitride semiconductor light emitting devices that generate light in this wavelength range. [0003] One of the issues related to designing high perfor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/343H01S5/187
CPCH01S5/18383H01S5/18369H01S5/20H01S5/0424H01S2304/12H01S5/34333B82Y20/00H01S5/18341H01S5/183
Inventor 斯科特·W·科尔扎因戴维·P·保尔
Owner AVAGO TECH ECBU IP (SINGAPORE) PTE LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap