Method of fabricating a semiconductor device

A technology of semiconductors and devices, applied in the field of manufacturing semiconductor devices, can solve problems such as increasing off-current

Inactive Publication Date: 2007-03-28
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, the GOLD structure described in this article has a problem that the off-state current (the current that flows ...

Method used

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  • Method of fabricating a semiconductor device
  • Method of fabricating a semiconductor device
  • Method of fabricating a semiconductor device

Examples

Experimental program
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Embodiment 1

[0166] Embodiment 1 is an embodiment in which the present invention is applied to an active matrix liquid crystal display device.

[0167] Fig. 10 is a schematic configuration diagram of the active matrix type liquid crystal display panel of this embodiment. The structure of the liquid crystal panel is that the liquid crystal is held between the active matrix substrate and the counter substrate, and a voltage corresponding to image data is applied to the liquid crystal through electrodes formed on the active matrix substrate and the counter substrate to form a liquid crystal on the panel. Display the image.

[0168] On the active matrix substrate 200 , a pixel portion 202 using TFTs as switching elements, and a gate driver circuit 203 and a source driver circuit 204 for driving the pixel portion 202 are formed on a glass substrate 300 . The driving circuits 203 and 204 are connected to the pixel portion 202 via source wiring and drain wiring, respectively.

[0169] Also, a s...

Embodiment 2

[0203] This embodiment is an improved example of embodiment 1, but the order of adding steps of phosphorus and boron is changed, and the others are the same as embodiment 1. The manufacturing steps of this embodiment will be described with reference to FIGS. 17A-17E. In FIGS. 17A-17E, the same reference numerals as those in FIGS. 15A-15F and 16A-16E denote the same structural elements.

[0204] Although in Example 1 boron was added after phosphorus was added to the semiconductor layer, in Example 2 boron was added first.

[0205] Although the manufacturing steps of a CMOS circuit are described in this embodiment, it goes without saying that this embodiment is applicable to the manufacturing steps of an active matrix substrate in Embodiment 1 on which a pixel portion and a driver circuit are integrated.

[0206] The structure of Fig. 15E is realized according to the steps shown in Embodiment 1. Next, the resist mask 405 is removed. Fig. 17A shows this state.

[0207] After ...

Embodiment 3

[0218] Also in this embodiment, similar to Embodiment 2, a manufacturing step in which the order of phosphorus and boron addition steps is changed is described. The manufacturing steps of this embodiment are described with reference to Figs. 18A-18E. In Figs. 18A-18E, the same reference numerals as in Figs. 15A-15F and 16A-16E denote the same structural elements.

[0219] Likewise, this embodiment corresponds to an improved example of Embodiment 2. In Example 2, boron was added after phosphorus was added at a low concentration in manufacturing an n-channel TFT. However, this example is an example in which boron is first added at a high concentration.

[0220] The structure of Fig. 15E is realized according to the steps shown in Embodiment 1. Next, the resist mask 405 is removed. Fig. 18A shows this state.

[0221] After that, a resist mask 600 covering the n-channel TFT is formed. Boron is added to the semiconductor layer 304 by an ion doping method using the resist mask...

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Abstract

There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first gate electrode. In the semiconductor layer, two kinds of n-type impurity regions are formed between a channel formation region and n-type impurity regions. Some of the n-type impurity regions overlap with a gate electrode, and the other n-type impurity regions do not overlap with the gate electrode. Since the two kinds of n-type impurity regions are formed, an off current can be reduced, and deterioration of characteristics can be suppressed.

Description

[0001] This case is a divisional application of the parent case (application number 200410098272.6). technical field [0002] The present invention relates to thin film transistors (hereinafter referred to as "TFTs") and semiconductor devices including circuits composed of thin film transistors. The present invention also relates to an electro-optical device typified by a liquid crystal panel as a semiconductor device and electronic equipment including the electro-optic device as a component. Background technique [0003] Incidentally, the term "semiconductor device" in this specification means any device that functions by utilizing semiconductor properties, and electro-optical devices, semiconductor circuits, and electronic equipment are also semiconductor devices. [0004] In recent years, active matrix type liquid crystal display devices in which circuits are composed of TFTs using polysilicon films have attracted attention. The device controls an electric field acting o...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/49
Inventor 山崎舜平
Owner SEMICON ENERGY LAB CO LTD
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