Non-cyanogen type electrolytic gold plating bath for bump forming

A bump, non-cyanide technology, used in the field of non-cyanide electrolytic gold plating baths, can solve the problems of short circuit, bump interval or wiring interval narrowing, etc. Effect

Active Publication Date: 2007-04-11
EEJA LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, in this case, the interval between bumps and wiring becomes narrow, and a cir

Method used

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  • Non-cyanogen type electrolytic gold plating bath for bump forming

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～17、 comparative example 1～11

[0062] Prepare the non-cyanide electrolytic gold plating bath according to the combination shown in Table 1 to Table 4. The unit of the compounding concentration of each raw material is g / L unless otherwise specified. But Na 3 Au(SO 3 ) 2 Indicates the concentration of Au amount, Na 2 SO 3 means SO 3 Amount concentration, Na 2 SO 4 means SO 4 amount of concentration.

[0063] A silicon wafer having bump openings patterned with a novolak-based positive photoresist was used as the object to be plated. The cross-sectional composition of the pre-plating surface of the silicon wafer is gold sputtered film / TiW / SiO 2 . The object to be plated was immersed in 1 L of the prepared non-cyanide electrolytic gold plating bath, and energized to form an electroplated film having a film thickness of 15 μm. Furthermore, the current efficiency of non-cyanide electrolytic gold plating baths is typically 100% under stable plating operating conditions.

[0064] After forming a film wi...

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Abstract

Provided is a non-cyanogen based gold electroplating bath which suppresses the diffusion of the opening part of a mask material upon plating, and can form a bump and wiring with dimensions practically equal to the designed dimensions. The non-cyanogen based gold electroplating bath for forming a bump comprises: the alkali salt of gold sulfite or ammonium gold sulfite as a gold source; water soluble amine as a stabilizer; a crystal regulator; a sulfite and a sulphate as conducting salts; a buffer; polyalkylene glycol and/or an amphoteric surfactant. The amount of the polyalkylene glycol to be blended is preferably 0.1 mg to 10 g/L. The amount of the amphoteric surfactant to be blended is preferably 0.1 mg to 1 g/L. As the amphoteric surfactant, carboxybetaines can be preferably used.

Description

technical field [0001] The present invention relates to a silicon wafer or a Ga / As compound wafer suitable for forming gold bumps or bumps on a silicon wafer or a Ga / As compound wafer having a bump pattern or a wiring pattern formed using a novolak-based positive photoresist. Non-cyanide electrolytic gold plating bath for bump formation of gold wiring and bump formation method using the bath. Background technique [0002] Among the non-cyanide electrolytic gold plating baths, for example, an electroplating bath using chloroaurate or gold sulfite as a gold source and using compounds such as thiouracil as a complex (stabilizer) is known (Patent Document 1). In addition, among non-cyanide electrolytic gold plating baths, electroplating baths using alkali metal gold sulfite or ammonium gold sulfite as a gold source and water-soluble amines as a stabilizer are also known. [0003] As the latter electrolytic gold plating bath, gold alkali metal sulfite or gold ammonium sulfite, w...

Claims

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Application Information

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IPC IPC(8): C25D3/48C25D7/12H01L21/288H01L21/445
CPCC25D3/48C25D7/123H01L24/11H01L2224/11
Inventor 中村宏
Owner EEJA LTD
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