Method for manufacturing high-tension film and strain silicon metal oxide semiconductor transistor

Abstract

The invention relates to a method for preparing high-tension film and stress silicon metal oxide semi-conductor transistor, wherein it comprises that: first providing one semi-conductor substrate, forming one grind, at least one space wall, and one source / drain area on the substrate; then processing n times of depositions, to cover the grid, source / drain area via n layers of high tensile stress film, while each film is treated thermally one time, and n is not lower than 2.

Description

technical field [0001] The invention relates to a method for manufacturing a high tension film, in particular to a method for forming a high tension film on a strained silicon metal oxide semiconductor transistor. Background technique [0002] As semiconductor manufacturing technology becomes more and more sophisticated, integrated circuits have undergone major changes, which has led to a rapid increase in computing performance and storage capacity of computers, and has driven the rapid development of peripheral industries. The semiconductor industry is also developing at the speed of doubling the number of transistors on integrated circuits every 18 months, as predicted by Moore's Law. 90 nanometers (0.09 microns), and 65 nanometers (0.065 microns process) in 2005. [0003] As the semiconductor technology enters the deep sub-micron era, the following technology is becoming increasingly important for improving the electrical performance of the driving circuit of the metal o...

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Problems solved by technology

[0008] However, since the ultraviolet curing process uses photons to break the Si-H and SiN-H bonds in silicon nitride to increase the tension of the film, its efficiency is bound to be limited by the thickness of the film, that is, the thicker the high-tension film, the thicker the film. Increased tension means lower

Existing methods for making high-tensile films only perform a single film deposition process and a single UV curing process for the film. Therefore, when the thickness of the high-tensile film is too thick, the efficiency of the UV process is often reduced, thereby affecting the stress produced by the film. and the drive current of the metal-oxide-semiconductor transistor

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