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Doped copper titanium oxide capacitor ceramic dielectric and producing method thereof

A doping-type, capacitive technology, applied in the direction of fixed capacitor dielectric, ceramics, fixed capacitor parts, etc., to achieve the effect of reduced reactivity, high dielectric constant, and energy saving

Inactive Publication Date: 2010-11-03
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the current preparation of CaCu3Ti4O12 requires a high sintering temperature and a long holding time; Promote the further growth of the particles of reactants or product particles, thereby reducing the reactivity between solids
Moreover, being at a higher sintering temperature for a long time not only consumes a large amount of energy, but also has an adverse effect on the service life of the sintering furnace; Ti4O12 Colossal Permittivity of Polycrystalline Bulk

Method used

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  • Doped copper titanium oxide capacitor ceramic dielectric and producing method thereof
  • Doped copper titanium oxide capacitor ceramic dielectric and producing method thereof
  • Doped copper titanium oxide capacitor ceramic dielectric and producing method thereof

Examples

Experimental program
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Embodiment 1

[0025] The present invention adopts solid state reaction method to prepare doped CaCu 3 Ti 4 o 12 , first select analytically pure CaCO 3 , CuO, TiO 2 as the main raw material, and mixed with an appropriate amount of SrCO 3 Form the corresponding stoichiometric formula Sr x Ca (1-x) Cu 3 Ti 4 o 12 (SCCT) powder, where x = 0.01, 0.02, 0.03, 0.04; and the samples were prepared by traditional dry pressing ceramic technology.

[0026] Sr below 0.01 Ca 0.99 Cu 3 Ti 4 o 12 As an example to illustrate its preparation process:

[0027] (1) According to Sr 0.01 Ca 0.99 Cu 3 Ti 4 o 12 The chemical proportion formula is used for batching, and the raw material powder is ground by planetary ball milling method, so that the particle size of the powder material is below 1 micron. Since the solid-phase reaction is mainly carried out by the movement and exchange of positions of the mixture lattice particles, in order to complete the solid-phase reaction as soon as possible,...

Embodiment 2

[0040] When using Na + 、K + Partial Ca substitution by unequal dielectric ions 2+ ion formation A x Ca (1-x) Cu 3 Ti 4 o 12 Ceramic material (where x=0.01, 0.02, 0.03, 0.04), when A + Ion is Na + or K + When the added amount of the ions increases, the sintering temperature of the corresponding CCTO material increases, its dielectric constant also increases, and the loss of the material decreases; but at the same time, its capacitance change rate increases. Through comparative study, it is found that the sample sintered at 1140°C and held for 24 hours can get the lowest loss, and the loss can reach less than 5% when the doping concentration is 0.02mol.

[0041] Doped with Na + 、K + Ions of equal valence replace Ca 2+ A formed by ions x Ca (1-x) Cu 3 Ti 4 o 12 Ceramic materials have high dielectric constant and small loss, and they have the same properties as doped Sr 2+ Form Sr 0.01 Ca 0.99 Cu 3 Ti 4 o 12 Similar sintering characteristics of dielectric ma...

Embodiment 3

[0051] in A x Ca (1-x) Cu 3 Ti 4 o 12 Doped with 0.01mol of Sr in the ceramic material 2+ After that, the B-site dopant ion Zr was introduced 4+ to synthesize Sr 0.01 Ca 0.99 Cu 3 Ti 4(1-y) Zr 4 yO 12 , wherein y=0.01, 0.02, 0.03, 0.04; and the synthesis of the dielectric material is carried out using the similar process steps as in Example 1.

[0052] Sr below 0.01 Ca 0.99 Cu 3 Ti 3.96 Zr 0.04 o 12 As an example to illustrate its preparation process:

[0053] (1) First select analytically pure CaCO 3 , CuO, TiO 2 as the main raw material, and the analytically pure doped raw material SrCO 3 and ZrO 2 , and according to Sr 0.01 Ca 0.99 Cu 3 Ti 3.96 Zr 0.04 o 12 The stoichiometric formula carries out the batching of described raw material powder;

[0054] (2) Grinding the raw material powder by planetary ball milling so that the particle size of the powder reaches below 1 micron;

[0055](3) Preparation of the precursor: the furnace temperature is ra...

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Abstract

A method for preparing a capacity material of doped CaCu3Ti4 O12 includes replacing Ca2+ ion at A position in CaCu3Ti4O12 material by adding Sr2+ ,Na2+ or K+ doping ion and replacing Ti4+ ion at B position in CaCu3Ti4O12 material by adding Zr4+ doping ion, sintering prepared material at temperature of 1140deg.c to obtain capacity material with high dielectric constant, using Automatic LCR meter 4225 ester to confirm dielectric performance and sintered character of doped capacity ceramic material.

Description

technical field [0001] The present invention relates to ceramic compositions characterized by composition and methods for their preparation, in particular to CaCu 3 Ti 4 o 12 Capacitor ceramic dielectric and method for its preparation. Background technique [0002] With the demand for miniaturization and miniaturization of electronic devices, for ceramic capacitors, there is an urgent need for dielectric materials with higher dielectric constants, and at the same time, it is required to have a stable capacitance change rate in the widest possible application temperature range and lower losses. CaCu 3 Ti 4 o 12 It is a newly discovered high dielectric material, which is a perovskite-like structure, and its relative permittivity is on the order of 104; as M.A.Subramanian et al. published in JournalofSolid State Chemistry151, 323-325 (2000), the title is "High Dielectric Constant in ACu 3 Ti 4 o 12 and ACu 3 Ti 3 FeO 12 Phases”. Although CaCu 3 Ti 4 o 12 It is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/12H01B3/12C04B35/462C04B35/622
Inventor 吴裕功刘震张慧利
Owner TIANJIN UNIV
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