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Photoelectric conversion element, solid-state imaging device, and electronic apparatus

a technology of solid-state imaging and conversion elements, applied in the direction of picture signal generators, television systems, radioation controlled devices, etc., can solve problems such as lowering color reproducibility, and achieve the effects of high color reproducibility, low noise, and high sensitivity

Active Publication Date: 2022-05-31
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a photoelectric conversion element, a solid-state imaging device, and an electronic apparatus that use a fullerene derivative modified by a substituent with smaller absorbance than fullerene in a visible range to improve the efficiency of converting light into electricity. This modification causes the absorption wavelength peak to shift toward shorter wavelength side and reduces interaction between fullerenes, resulting in improved spectroscopic shape of the photoelectric conversion element and higher efficiency of converting light of a predetermined wavelength region. The patent has various applications including improving image quality in solid-state imaging devices and enhancing light detection in electronic devices.

Problems solved by technology

However, as in the above-described PTLs 2 and 3, in a case where the photoelectric conversion layer itself has a spectroscopic function, when simply using the fullerene or the fullerene derivative as the photoelectric conversion layer, there is an issue of a deteriorated spectroscopic shape of the photoelectric conversion element due to a broad absorption spectrum of the fullerene, which leads to lowered color reproducibility.

Method used

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  • Photoelectric conversion element, solid-state imaging device, and electronic apparatus

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application examples

2. APPLICATION EXAMPLES

Application Example 1

[0107]FIG. 14 illustrates an overall configuration of the solid-state imaging device (solid-state imaging device 1) that uses, as each pixel, the photoelectric conversion element 10 described in the foregoing embodiment. The solid-state imaging device 1 is a CMOS imaging sensor. The solid-state imaging device 1 has a pixel section 1a as an imaging region on the semiconductor substrate 11. Further, the solid-state imaging device 1 includes, for example, a peripheral circuit section 130 configured by a row scanning section 131, a horizontal selection section 133, a column scanning section 134, and a system controller 132 in a peripheral region of the pixel section 1a.

[0108]The pixel section 1a includes, for example, a plurality of unit pixels P (corresponding to photoelectric conversion elements 10) that are arranged two-dimensionally in matrix. To the unit pixels P, for example, pixel drive lines Lread (specifically, row selection lines an...

application example 2

[0113]The above-described solid-state imaging device 1 is applicable to any type of electronic apparatus having an imaging function, for example, a camera system such as a digital still camera and a video camera, and a mobile phone having the imaging function. FIG. 14 illustrates an outline configuration of an electronic apparatus 2 (camera) as an example thereof. This electronic apparatus 2 may be, for example, a video camera that is able to photograph a still image or a moving image. The electronic apparatus 2 includes, for example, the solid-state imaging device 1, an optical system (optical lens) 310, a shutter device 311, a drive section 313 that drives the solid-state imaging device 1 and the shutter device 311, and a signal processing section 312.

[0114]The optical system 310 guides image light (incident light) from a subject to the pixel section 1a in the solid-state imaging device 1. The optical system 310 may be configured by a plurality of optical lenses. The shutter devic...

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Abstract

A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode, and an organic semiconductor layer. The first electrode and the second electrode are disposed to face each other. The organic semiconductor layer is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a U.S. National Phase of International Patent Application No. PCT / JP2016 / 064884 filed on May 19, 2016, which claims priority benefit of Japanese Patent Application No. JP 2015-108832 filed in the Japan Patent Office on May 28, 2015. Each of the above-referenced applications is hereby incorporated herein by reference in its entirety.TECHNICAL FIELD[0002]The disclosure relates to, for example, a photoelectric conversion element using an organic semiconductor, a solid-state imaging device provided with the photoelectric conversion element, and an electronic apparatus.BACKGROUND ART[0003]In recent years, there has been progress in miniaturization of a pixel size in a solid-state imaging device such as a charge coupled device (CCD) image sensor and a complementary metal oxide semiconductor (CMOS) image sensor. This leads to a decrease in the number of photons that enter a unit pixel, thus leading to lowered sensitivity as w...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L31/00H01L51/44H01L31/10H01L27/146H01L51/00H04N9/04H01L51/42H04N5/369H01L31/0224H01L27/30H10K99/00
CPCH01L51/441H01L27/1464H01L27/14609H01L27/14645H01L27/14667H01L31/022425H01L31/10H01L51/0047H01L51/0078H01L51/42H04N5/369H04N9/045H01L27/14603H01L27/307Y02E10/549H04N25/70H04N23/10H10K39/32H10K85/215H10K85/311H10K30/00H10K30/81
Inventor TAKEMURA, ICHIRONEGISHI, YUKIHASEGAWA, YUTA
Owner SONY SEMICON SOLUTIONS CORP
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