Photoelectric conversion element, solid-state imaging device, and electronic apparatus

Abstract

A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode, and an organic semiconductor layer. The first electrode and the second electrode are disposed to face each other. The organic semiconductor layer is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a U.S. National Phase of International Patent Application No. PCT / JP2016 / 064884 filed on May 19, 2016, which claims priority benefit of Japanese Patent Application No. JP 2015-108832 filed in the Japan Patent Office on May 28, 2015. Each of the above-referenced applications is hereby incorporated herein by reference in its entirety.TECHNICAL FIELD[0002]The disclosure relates to, for example, a photoelectric conversion element using an organic semiconductor, a solid-state imaging device provided with the photoelectric conversion element, and an electronic apparatus.BACKGROUND ART[0003]In recent years, there has been progress in miniaturization of a pixel size in a solid-state imaging device such as a charge coupled device (CCD) image sensor and a complementary metal oxide semiconductor (CMOS) image sensor. This leads to a decrease in the number of photons that enter a unit pixel, thus leading to lowered sensitivity as w...

AI Technical Summary

Benefits of technology

[0010]It is therefore desirable to provide a photoelectric conversion element, a solid-state imaging device, and an electronic apparatus that make it possible to improve a photoelectric conversion efficiency of a predetermined wavelength region.

[0014]According to the photoelectric conversion element, the solid-state imaging device, and the electronic apparatus of the respective embodiments of the disclosure, the fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene in a visible range is used as the semiconductor layer provided between the first electrode and the second electrode that are disposed to face each other. Subjecting a fullerene to polysubstituted modification causes an absorption wavelength peak to be shifted toward shorter wavelength side, and reduces an interaction between fullerenes. This improves the spectroscopic shape of the photoelectric conversion element using the fullerene.

[0015]According to the photoelectric conversion element, the solid-state imaging device, and the electronic apparatus of the respective embodiments of the disclosure, the semiconductor layer provided between the first electrode and the second electrode contains the fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene in a visible range. Accordingly, the absorption wavelength peak of the fullerene is shifted toward shorter wavelength side, and an interaction between fullerenes are reduced, thus improving the spectroscopic shape of the photoelectric conversion element using the fullerene. In other words, it becomes possible to enhance the photoelectric conversion efficiency of the predetermined wavelength region. It is to be noted that the effects described here are not necessarily limitative, and may be any of effects described in the disclosure.

Problems solved by technology

However, as in the above-described PTLs 2 and 3, in a case where the photoelectric conversion layer itself has a spectroscopic function, when simply using the fullerene or the fullerene derivative as the photoelectric conversion layer, there is an issue of a deteriorated spectroscopic shape of the photoelectric conversion element due to a broad absorption spectrum of the fullerene, which leads to lowered color reproducibility.

Images