Dry clean method instead of traditional wet clean after metal etch
a wet clean and metal etch technology, applied in the direction of cleaning process and apparatus, cleaning using liquids, chemistry apparatus and processes, etc., can solve the problems of ineffective removal of sidewall polymer layer, failure of the bottom power (bias rf power) to introduce, and failure of microwave power and above combination gas mixture to remove sidewall polymer layer
Inactive Publication Date: 2003-06-05
QIMONDA
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Benefits of technology
[0054] It is believed that the use of a magnetic field with a low pressure without a downstream microwave power is an important feature of the invention as it can improve plasma density and increase ion acceleration.[0055] Further advantages of the present invention include:[0056] metal corrosion and metal pitting are prevented;[0057] the defect density of the devices are lowered;[0058] the time required to repair defects is minimized and so the product cycle time is lowered;[0059] the yield is increased due to the decreased defect density;[0060] elimination of wet chemicals reduces the cost of purchasing, handling and properly disposing such chemicals; and[0061] no wet chemicals eliminates a source of electrolytes and so eliminates any deleterious electrogalavanic processes.Process Known to the Inventors (Not
Problems solved by technology
However, attempts made using microwave power and the above combination gas mixture does not remove sidewall polymer layer 20 well.
Further, attempts made to introduce the bottom power (bias RF power) also failed to effectively remove sidewall polymer layer 20.
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[0038] The inventors have discovered that removing the polymer layer 20 requires the use of a two step process (Step I and Step II):
[0039] STEP I. low pressure of less than 50 millitorr, more preferably from about 10 to 50 millitorr, and most preferably about 20 millitorr;
[0040] medium RF power of greater than about 200 W, more preferably from about 200 to 500 W, and most preferably about 300W;
[0041] a magnetic field greater than about 10 gauss (G), more preferably from about 20 to 100 gauss, and most preferably about 20 gauss at a radio frequency of about 13.56 MHz;
[0042] and the use of a fluorine containing gas / oxygen containing gas mixture having a preferable fluorine gas:oxygen gas ratio about 1 to 4; the fluorine containing gas may be CF.sub.4, NF.sub.3, or CHF.sub.3, and is preferably CF.sub.4; the oxygen containing gas may be O.sub.2, or O.sub.3, and is preferably O.sub.2.
[0043] at a hardware setting temperature from about 20 to 100.degree. C.;
[0044] for from about 10 to 60 s...
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Abstract
A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing gas / oxygen containing gas mixture into the processing chamber proximate the etched metallization structure without the use of a downstream microwave while applying a magnetic field proximate the etched metallization structure and maintaining a pressure of less than about 50 millitorr within the processing chamber for a predetermined time.
Description
[0001] Prevention of metal corrosion and pitting defects with conventional wet cleaning methods after metal etching is difficult. Wet cleaning methods can leave chlorine (Cl.sub.2) trapped in a thin sidewall polymer which maximizes corrosion and pitting of, for example, an aluminum (Al) or aluminum alloy substrate. If a thicker sidewall polymer is formed to minimize the exposure of the aluminum / aluminum alloy substrate to Cl.sub.2, the difficulty of a more narrow window within which to perform the wet clean arises.[0002] Therefore, passivation (formation of the sidewall polymer within the etched structure) during dry etching and clean step is a critical step. Sometimes an adequate passivation step followed by a poor clean step will also cause pitting and corrosion. With device dimensions, or design rule, getting smaller and smaller, the influence of any such defects on device performance and reliability is becoming greater and greater.[0003] In high ion density reactors using high p...
Claims
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IPC IPC(8): H01L21/02H01L21/3213
CPCH01L21/02071Y10S438/906Y10S134/902H01L21/32136
Inventor CHANG, HONG-LONGKUNG, MING-LILU, HUNGYUEHLIU, FANG-FEI
Owner QIMONDA