Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of producing silicon nanoparticles from stain-etched silicon powder

a technology of stain-etched silicon and silicon nanoparticles, which is applied in the direction of silicon compounds, silicon layered products, cellulosic plastic layered products, etc., can solve the problems of high maintenance cost of expensive equipment, inability to produce porous silicon powder, and inability to meet the requirements of high-quality production and us

Inactive Publication Date: 2004-08-26
SI DIAMOND TECH
View PDF15 Cites 95 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This standard anodization technique is not, however, capable of producing porous silicon powder due to the inability of establishing electrical contact between particles.
Standard anodization techniques are not, however, capable of making such a porous silicon powder.
Most of these methods require either expensive equipment with high maintenance costs and / or they provide relatively low yield, considerably limiting the use of these materials for applications that require bulk quantities.
However, the product yields by this method are low.
Thus, the yield (mass efficiency) per run in this method is only about 10.sup.-5-10.sup.-6 of the mass of the precursor material (silicon wafer) which makes this approach practically unusable for mass production.
Thus, the process is limited by the presence of HNO.sub.2 at the surface of the silicon sample.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of producing silicon nanoparticles from stain-etched silicon powder
  • Method of producing silicon nanoparticles from stain-etched silicon powder
  • Method of producing silicon nanoparticles from stain-etched silicon powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Bulk p-type silicon with a resistivity of 1-10 Ohm.multidot.cm was ground, ball milled, and sieved to produce a silicon powder comprising silicon particles with an average diameter of 100 micrometers. Approximately 0.1 grams of this silicon powder was placed in a flask with approximately 2 mL of an aqueous solution comprising 1 mL of 49 percent hydrofluoric acid and 1 mL of a 0.2 M solution of Fe(NO.sub.3).sub.3 in water. Reaction conditions comprised room temperature, in air, 30 minute duration, stirring periodically every 3-5 minutes. Evolution of NO.sub.2 was observed. The resulting porous silicon particles were then filtered, washed with water, and characterized with ultraviolet (UV) photoluminescence (PL) spectroscopy. Characterization revealed strong red-orange PL of the powder particles, indicating a porous layer on their surface.

[0045] To produce silicon nanoparticles, 0.5 grams of the porous silicon powder was redispersed in 5 mL of ethanol. This suspension was then ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention is for a porous silicon powder comprising silicon particles wherein the outermost layers of said particles are porous. The present invention is also directed to a method of making this porous silicon powder using a stain etch method. The present invention is also directed to a method of making silicon nanoparticles from the porous silicon powders using a process of ultrasonic agitation. The present invention also includes methods of processing these silicon nanoparticles for use in a variety of applications.

Description

[0001] The present invention relates in general to materials science, and in particular, to nanostructured materials and nano-size particles, and methods for making same.BACKGROUND INFORMATION[0002] 1. Methods of Making Porous Silicon[0003] Porous silicon is a material formed on a surface of bulk silicon by forming multiple nanometer-sized pores using a chemical or electrochemical etching process. A standard electrochemical technique for making such porous silicon is the anodization of silicon. Anodization involves the application of a potential to a bulk silicon sample (e.g., a silicon wafer). For this anodization process, the wafer is immersed in an electrolyte (etching solution) which is commonly a mixture of hydrofluoric acid, water and other components. The anodization process requires a continuous and conducting sample of silicon so that it can be immersed in an electrolyte and a positive potential can be applied (Canham, Appl. Phys. Lett., 57, 1046 (1990)). This standard anod...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): B32B5/16C01B33/02
CPCC01B33/02C01B33/021Y10T428/2991Y10S977/90Y10T428/12479Y10T428/2993Y10T428/2982
Inventor LI, YUNJUNPAVLOVSKY, IGOR
Owner SI DIAMOND TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com