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Method and apparatus for ionization film formation

a technology of ionization film and ionization film, which is applied in the field of ionization film formation and ionization film formation apparatus, can solve the problems of adversely affecting the quality of the film formation, and achieve the effects of improving the ionization efficiency of vaporized particles, preventing the sputtering of hot-cathode filaments, and significantly improving the life of hot-cathode filaments

Inactive Publication Date: 2005-02-10
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method and apparatus for ionization film formation that can form a deposited film with high bottom coverage ratio onto even a substrate having deep grooves on the surface. The method and apparatus have improved ionization efficiency of vaporized particles and prevent sputtering of a hot-cathode filament, which results in a significantly improved life of the hot-cathode filament. The method involves ionizing vaporized particles with an ionization mechanism of the hot cathode system, and injecting the ionized particles into a substrate. The apparatus has a gas introduction device to introduce an ionization gas inside the ionization mechanism at the back of a hot-cathode filament, between the hot-cathode filament and a grid, or the like, when viewed from the center of an ionization space. The invention also includes forming at least one of excited helium atoms and helium ions by causing helium gas to collide with thermoelectrons, and ionizing vaporized particles by colliding the vaporized particles with at least one of the excited helium atoms and the helium ions. The method and apparatus can be used in various fields such as electronics, sensors, and optics.

Problems solved by technology

Degradation of the coverage property and adherence of the films onto the side surfaces adversely affects the quality of the film formation.

Method used

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  • Method and apparatus for ionization film formation
  • Method and apparatus for ionization film formation
  • Method and apparatus for ionization film formation

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

Regarding the configuration of the ionization sputtering apparatus according to the present embodiment, points of difference from the configuration of the apparatus for ionization film formation in the first embodiment will be described bellow with reference to the drawings.

The exhaust system 16 is a combined exhaust system capable of evacuating the chamber 1 from atmospheric pressure to a pressure on the order of 1×10−5 Pa. The exhaust velocity is adjusted with a conductance valve which is an exhaust velocity adjustor not shown in the drawing, and, thereby, the residence time of the gas for discharge in the chamber can be controlled.

The target 17 is in the shape of a disk on the order of, for example, 3 mm in thickness and 3 inches (76.2 mm) in diameter, and is arranged on the sputtering chamber 1 with a backing plate and an insulation material therebetween. A magnet mechanism 18 is arranged at the rear of the target 17, and, therefore, magnetron sputtering can be performed. The...

example 1

In a manner similar to that in the aforementioned first embodiment, ionization film formation was performed continuously, and the life of the filament 50b was measured. The materials and conditions were as follows: vaporization material: Fe distance between crucible and substrate: 155 mm substrate dimension: diameter 2 inches (50.8 mm) substrate material: glass pressure in sputtering chamber: 0.5 Pa ionization gas: He magnetic flux density at point A: 200 G ionization mechanism grid voltage: 50 V ionization mechanism grid current: 20 A ionization mechanism floating power supply voltage: −40V lead-in electrode voltage: minimum value 0 V, maximum value −60 V lead-in electrode voltage frequency: 500 kHz lead-in electrode voltage duty: 1 to 100

The results are shown in Table 1.

example 2

A sample substrate having a bottom width of 0.25 μm and an aspect ratio of 4 was subjected to ionization film formation under the same conditions as that in Example 1, and, therefore, a sample was prepared.

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Abstract

A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for ionization film formation and an ionization film-formation apparatus used in manufacture of semiconductor devices, such as LSIs, recording media, such as magneto-optical disks, and the like. 2. Description of the Related Art Various methods for film formation have been used in formation of wirings and formation of interlayer insulation films regarding various semiconductor devices and, furthermore, in formation of magnetic layers, protection layers, etc., regarding recording media. In this case, film-formation apparatuses are required to perform in various ways. Recently, improvement of a coverage property has been required on the inner surfaces of holes arranged in substrates, especially the bottom portions. FIG. 6 shows the shape of a film deposited by a conventional sputtering method. The thickness of films 102 deposited on the groove bottom portions 104 of a substrate 8 are ve...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C14/04C23C14/32C23C14/35G11B11/105
CPCC23C14/046H01J2237/3137C23C14/355C23C14/32
Inventor YAMAGUCHI, HIROHITOKANAI, MASAHIROKOIKE, ATSUSHIOYA, KATSUNORI
Owner CANON KK
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