Nitride semiconductor device
a technology of nitride and semiconductor, which is applied in the direction of semiconductor devices, semiconductor lasers, laser details, etc., can solve the problems of insufficient luminous intensity of conventional led devices, easy damage of devices made of nitride semiconductor, and insufficient availability of led devices with higher luminous intensity. achieve good electrostatic withstanding voltage and improve luminous intensity
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embodiment 1
[0086]FIG. 1 is a schematic sectional view of an LED device according to an embodiment of the present invention.
[0087] The nitride semiconductor device according to Embodiment 1 of the present invention relates to the first nitride semiconductor device of the present invention, and the structure of the first nitride semiconductor device is not limited to the embodiments as described hereinafter. Rather, the present invention can be applied to any nitride semiconductor devices which comprises, at least, a medium-doped p-cladding layer (formed of a p-type multi-film layer or a p-type single-layered layer), a p-type low-doped layer doped with a low p-type impurity concentration, and a high-doped p-contact layer doped with a high p-type impurity concentration, in which those layers are successively grown on the active layer.
[0088] As shown in FIG. 1, the nitride semiconductor device of Embodiment 1 comprises a substrate 1, a buffer layer 2, undoped GaN layer 3, an n-contact layer 4 do...
embodiment 2
[0183] Embodiment 2 according to the present invention will be described hereinafter.
[0184] The nitride semiconductor device of Embodiment 2 relates to the Second nitride semiconductor device according to the present invention.
[0185] The nitride semiconductor device of Embodiment 2 is grown as the way similar to that of Embodiment 1 except that the p-type low-doped layer 9 is undoped such that the p-type low-doped layer 9 has the p-type impurity concentration adjusted to be lower than those of the p-cladding layer 8 and the p-contact layer 10, and also has the bottom region with a p-type impurity minimal concentration of 1×1019 / cm3 or less.
[0186] It is noted that the p-cladding layer of Embodiment 2 corresponds to the first p-layer according to Second nitride semiconductor device.
[0187] Thus, according to Embodiment 2, the p-type low-doped layer 9 is undoped, such that the impurity is doped from the p-cladding layer 8 and p-contact layer 10 into the p-type low-doped layer 9, of ...
example 1
[0215] Referring to FIG. 1, Example 1 is explained hereinafter.
[0216] A substrate 1 of sapphire (C-face) is set within a MOCVD reactor flown with H2, and the temperature of the substrate is set to 1050 C.°, the substrate 1 is cleaned.
[0217] (Buffer Layer 2)
[0218] Subsequently, the growth temperature is decreased to 510 C.° and a buffer layer 2 made of GaN which has a thickness of about 100 angstroms is grown on the substrate 1 flown with H2 as a carrier gas, and NH3 and TMG (trimethylgallium) as material gases into the reactor.
[0219] (Undoped GaN Layer 3)
[0220] After growing the buffer layer 2, only TMG is held, and the substrate temperature is increased to 1050 C°. After the temperature is stable, again the material gas of TMG and NH3 and the carrier gas of H2 are flown into the reactor to grow the undoped GaN layer 3 having a thickness of 1.5 μm on the buffer layer 2.
[0221] (n-Contact Layer 4)
[0222] While the growth temperature is kept to 1050 C.°, the material gas of TMG a...
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