Non-volatile memory cell

Abstract

A memory cell is disclosed. The memory cell includes an N-well, three P-type doped regions formed on the N-type well, a first stacked dielectric layer formed on the N-type well and between a first doped region and a second doped region from among the three P-type doped regions, a first gate formed on the first stacked dielectric layer, a second stacked dielectric layer formed on the N-type well and between the second doped region and a third doped region from among the three P-type doped regions, and a second gate formed on the second stacked dielectric layer.

Description

Cross Reference To Related Applications [0001] This application is a division of pending U.S. application Ser. No. 10 / 707,700 filed Jan. 5, 2004.BACKGROUND OF INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a non-volatile memory cell, and more specifically, to a non-volatile memory cell having two transistors and a method for operating it. [0004] 2. Description of the Prior Art [0005] Non-volatile memory stores data even without a power supply so that it is widely used in various portable electronic products such as personal digital assistants (PDA), mobile phones, and memory cards. In order to respond to these requirements, non-volatile memory technology aims for compatibility with CMOS processing, low power consumption, high writing efficiency, low cost and high density. However, as non-volatile memories become smaller in size, their gate oxide layers become accordingly thinner so that stored data vanishes easily, which causes a problem in the da...

AI Technical Summary

Benefits of technology

The solution enables efficient data storage with reduced chip area and manufacturing complexity, while preventing write interference and maintaining data integrity by using stacked dielectric layers and PMOS transistors, allowing for cost-effective and high-density memory solutions.

Problems solved by technology

However, as non-volatile memories become smaller in size, their gate oxide layers become accordingly thinner so that stored data vanishes easily, which causes a problem in the data storing ability of non-volatile memory.

Therefore, the conventional memory cell 10 occupies too large chip area and is structurally complicated, all of which increase the cost and difficulties in the manufacturing process.

Images