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Methods of making nickel/vanadium structures

a technology of nickel/vanadium structure and sputtering, which is applied in the direction of electrolysis components, vacuum evaporation coatings, coatings, etc., can solve the problems of limiting the purity of ni—v alloys that can be formed, restricting the quality of sputter-deposited materials formed from targets, and limiting the purity of conventional nickel/vanadium materials. purity is typically imposed, and achieves small average grain size.

Inactive Publication Date: 2005-10-20
GUO WEI +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The high-purity, small-grain-size nickel / vanadium sputtering components produce higher-quality sputter-deposited materials with improved homogeneity and purity, suitable for advanced semiconductor applications such as under-bump metals, C4 assemblies, silicide formation, and high-end coatings, while preventing contamination from non-target components.

Problems solved by technology

The purity and grain size of the sputtering targets limits the quality of the sputter-deposited materials formed from the targets.
A limitation on the purity of conventional nickel / vanadium materials is typically imposed by the purity of vanadium.
The purity of available vanadium thus limits the purity of Ni—V alloys that can be formed.

Method used

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  • Methods of making nickel/vanadium structures
  • Methods of making nickel/vanadium structures
  • Methods of making nickel/vanadium structures

Examples

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example

[0035] A high-purity Ni—V ingot is uni-directionally hot-rolled at a high temperature (such as a temperature from 1400° F. to 2400° F. (760° C.-1316° C.)) to decrease a thickness of the ingot and produce a slab (the thickness of the slab can be, for example, about 1.5″ (3.81 cm)); with a typical deformation induced by the hot rolling being at least about 90% (i.e, the thickness of the slab is less than or equal to about 10% of the starting thickness of the ingot). The slab is cooled to room temperature and cut into several smaller sections. The sections are subjected to hot-rolling (at, for example, a temperature of from 1400° F. to 2400° F.), followed by cold-rolling (at for example, about room temperature) to reduce the thickness of the sections to a final thickness (for example about 0.35″ (0.89 cm)). The hot and cold rolling across the sections is preferably uni-directional, and along the same direction as the uni-directional rolling across the ingot. After the hot and cold roll...

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Abstract

The invention includes sputtering components, such as sputtering targets, comprising high-purity Ni—V. The sputtering components can have a fine average grain size throughout, with an exemplary fine average grain size being a grain size less than or equal to 40 microns. The invention also includes methods of making high-purity Ni—V structures.

Description

RELATED PATENT DATA [0001] This patent is related to U.S. Provisional Patent Application Ser. No. 60 / 432,166, which was filed on Dec. 9, 2002.TECHNICAL FIELD [0002] The invention relates to high purity nickel / vanadium sputtering components (such as sputtering targets). The invention also relates to methods of making sputtering components. BACKGROUND OF THE INVENTION [0003] Nickel / vanadium materials have numerous applications in the semiconductor industry. For instance, the materials can be used in barrier / adhesion layers for under-bump metals to support flip chips, or in C4 (collapsed, controlled, chip connection) assemblies. A typical nickel / vanadium composition is Ni-7V (i.e., a composition containing about 7 weight percent vanadium and the remainder nickel). [0004] A typical method of forming nickel / vanadium layers in semiconductor processing is physical vapor deposition (PVD). Specifically, the layers are sputter-deposited from a sputtering target. The standard purity for conven...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C01GC22C19/03C22F1/10C23C14/00C23C14/34C25B11/00H01L21/203
CPCC22C19/03H01J37/3426C23C14/3414
Inventor GUO, WEITURNER, STEPHEN P.CAWLEY, EDWARD F.
Owner GUO WEI