Film formation apparatus and method for semiconductor process

Abstract

A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims the benefit of priority from prior Japanese Patent Applications No. 2004-182361, filed Jun. 21, 2004; and No. 2005-141401, filed May 13, 2005, the entire contents of both of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a film formation apparatus and method for a semiconductor process for forming a thin film doped with an impurity (dopant), such as phosphorous (P) or boron (B), on a target substrate, such as a semiconductor wafer. The term “semiconductor process” used herein includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target substrate, such as a semiconductor wafer or a glass substrate used for an LCD (Liquid Crystal Display) or FPD (Flat Pa...

AI Technical Summary

Benefits of technology

[0009] An object of the present invention is to increase the diffusion rate of a doping gas within a process container, while decreasing the exchange frequency of a doping gas source, thereby improving the productivity or throughput in a film formation apparatus and method for a semiconductor process.

Problems solved by technology

However, in general, doping gases of this kind have a very low vapor pressure.

Accordingly, where a doping gas in a pure state is supplied into a process container, it cannot diffuse sufficiently, thereby resulting in a less uniform doping distribution.

However, in this case, as described above, the consumption (outflow) per unit time of the diluted doping gas from the storage cylinder is very high.

As a consequence, the storage cylinder needs to be replaced with a new one in a relatively short time, thereby resulting in a low productivity and thus a low throughput.

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