Film formation apparatus and method for semiconductor process

a technology of film formation apparatus and semiconductor process, which is applied in the direction of chemistry apparatus and processes, crystal growth processes, coatings, etc., can solve the problems of low vapor pressure of doping gases of this kind, low consumption (outflow) per unit time of diluted doping gas from storage cylinders, and low uniform doping distribution, so as to improve the diffusion rate of doping gas, reduce the exchange frequency of doping gas sources, and improve the effect of productivity or throughpu
US20050282365A1Inactive Publication Date: 2005-12-22TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2005-12-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is based upon and claims the benefit of priority from prior Japanese Patent Applications No. 2004-182361, filed Jun. 21, 2004; and No. 2005-141401, filed May 13, 2005, the entire contents of both of which are incorporated herein by reference. BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a film formation apparatus and method for a semiconductor process for forming a thin film doped with an impurity (dopant), such as phosphorous (P) or boron (B), on a target substrate, such as a semiconductor wafer. The term “semiconductor process” used herein includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target substrate, such as a semiconductor wafer or a glass substrate used for an LCD (Liquid Crystal Display) or FPD (Flat Pa...

Claims

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