Gas supply unit, substrate processing apparatus, and supply gas setting method

a substrate processing and gas supply technology, applied in water supply installation, process and machine control, instruments, etc., can solve the problems of complicated piping structure of gas supply system, increasing the cost of apparatus control system, etc., to achieve simple piping configuration and reduce the cost of controlling flow rate , the effect of reducing the spa

Inactive Publication Date: 2006-06-15
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0015] In accordance with the present invention, a piping space and a c...

Problems solved by technology

Further, conventionally, it has been a major challenge to improve a uniformity of etching in the surface of the substrate by making the etching characteristics uniform on the surface of the substrate.
Thus, a piping structure ...

Method used

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  • Gas supply unit, substrate processing apparatus, and supply gas setting method
  • Gas supply unit, substrate processing apparatus, and supply gas setting method
  • Gas supply unit, substrate processing apparatus, and supply gas setting method

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Embodiment Construction

[0023] Hereinafter, a preferred embodiment of the present invention will be described. FIG. 1 is a longitudinal sectional view showing a schematic configuration of a plasma etching apparatus 1 serving as a substrate processing apparatus including a gas supply unit in accordance with the preferred embodiment of the present invention.

[0024] The plasma etching apparatus 1 is a capacitively coupled plasma etching apparatus having a parallel plate type electrode structure. The plasma etching apparatus 1 includes an approximately cylindrical processing chamber 10 that is grounded. The processing chamber 10 is formed of, e.g., aluminum alloy and the inner wall surface thereof is covered by an alumina film or an yttrium oxide film.

[0025] A cylindrical susceptor supporting table 14 is disposed in a central bottom portion of the processing chamber 10 via an insulating plate 12. A susceptor 16, serving as a mounting table, for mounting thereon a wafer W, i.e., a substrate, is disposed on the...

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Abstract

A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS: [0001] This document claims priority to Japanese Patent Application Number 2004-357292, filed Dec. 9, 2004 and U.S. Provisional Application No. 60 / 639,795, filed Dec. 29, 2004, the entire content of which are hereby incorporated by reference.FIELD OF THE INVENTION [0002] The present invention relates to a gas supply unit for supplying a gas to a processing chamber, a substrate processing apparatus connected to the gas supply unit and a supply gas setting method. BACKGROUND OF THE INVENTION [0003] In a manufacturing process of an electric device such as a semiconductor device or a liquid crystal display device, there are performed a film forming process for forming a conductive film or an insulating film on the surface of a substrate, an etching process for etching a film formed on the substrate and the like. [0004] For example, a plasma etching apparatus is widely employed in the etching process, wherein the plasma etching apparatus includes ...

Claims

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Application Information

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IPC IPC(8): E03B1/00G05D11/00
CPCF17D1/04G05D11/132Y10T137/2496Y10T137/0352Y10T137/0329Y10T137/0335Y10T137/87346C23C16/45561C23C16/45512H01L21/67069C23C16/52H01J37/32449H01J37/3244H01L21/67253
Inventor MIZUSAWA, KENETSUITO, KEIKIITOH, MASAHIDE
Owner TOKYO ELECTRON LTD
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