Non-volatile memory and method for fabricating the same

Abstract

A non-volatile memory is provided. The memory comprises a substrate, a dielectric layer, a conductive layer, an isolation layer, a buried bit line, a tunneling dielectric layer, a charge trapping layer, a barrier dielectric layer and a word line. Wherein, the dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. The isolation layer is disposed on the substrate and adjacent to the dielectric layer and the conductive layer. The buried bit line is disposed in the substrate and underneath the isolation layer. The tunneling dielectric layer is disposed on both the substrate and the sidewalls of the conductive layer and the isolation layer. The charge trapping layer is disposed on the tunneling dielectric layer and the barrier dielectric layer is disposed on the charge trapping layer. The word line is disposed on the substrate, crisscrossing with the buried bit line.

Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a memory, and more particularly, to a non-volatile memory and a method for fabricating the same.

[0003] 2. Description of the Related Art

[0004] The non-volatile memory is characterized by maintaining the stored data even when the power is down, and has thus become a mandatory device in many electronic products for providing normal operation of the electronic products when booted. Thus, the non-volatile memory has been widely used device in personal computer (PC) and other electronic equipment.

[0005] In a conventional non-volatile memory, a stacked layer made of oxide-nitride-oxide (ONO layer) is disposed between a gate and a substrate. Wherein, the nitride layer, used as a film layer where the charges are trapped in, is also known as a charge trapping layer, and the memory cell, whose charge trapping layer is made of such material, is called Nitride Read Only Memory.

[0006] FIG. 1 s...

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