Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method

Inactive Publication Date: 2006-06-29
TOKYO OHKA KOGYO CO LTD
View PDF7 Cites 144 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0020] The present invention has been achieved in view of the above problems accompanying the conventional technique, and an object of the invention is to provide a technique for applying a resist film obtained from the conventional resist composition established by spending considerable resources on the development to the liquid immersion lithography. Specifically, an o

Problems solved by technology

However, the light source having a shorter wavelength has a problem in that it requires a new expensive exposure system, and the increase of NA has a problem in that since there is a trade-off between the resolution and the depth of focus, the increase in the resolution lowers the depth of focus.
However, in the liquid immersion lithography process, the resist film is directly in contact with the refractive index liquid (immersion liquid) during the exposure, and hence the resist film is vulnerable to invasion by the liquid.
On the other hand, it has been confirmed that there are a number of resist compositions which cannot achieve satisfactory resolution of pattern in the liquid immersion lithography due to a change in their properties by the liquid, but which exhibit fine and high resolution in ordinary lithography employing the exposure through a layer of air.
These resist compositions include a number of compositions which are poor only in the resistance to the immersion liquid.
It has also been confirmed that, even when the resist film suitable for the liquid immersion lithography is used in the liquid im

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
  • Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
  • Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0151] The resin component, acid generator, and nitrogen-containing organic compound shown below were uniformly dissolved in an organic solvent to prepare positive resist composition 1.

[0152] As the resin component, 100 parts by mass of a methacrylate-acrylate copolymer comprising three types of constitutional units represented by the chemical formulae (39a), (39b), and (39c) below was used. In the constitutional units used in the preparation of the resin component, p, q, and r are as follows: p=50 mol %, q=30 mol %, and r=20 mol %. The resin component prepared had a mass average molecular weight of 10,000.

[0153] As the acid generator, 3.5 parts by mass of triphenylsulfonium nonafluorobutanesulfonate and 1.0 part by mass of (4-methylphenyl)diphenylsulfonium trifluoromethanesulfonate were used.

[0154] As the organic solvent, 1,900 parts by mass of a mixed solvent of propylene glycol monomethyl ether acetate and ethyl lactate (mass ratio: 6:4) was used.

[0155] Further, as the nitro...

example 2

[0162] An antireflection coating film, an ArF positive resist, and a protective film were formed on a substrate in accordance with the same procedure as that in Example 1.

[0163] Using laboratory equipment prepared by Nikon Corporation using a prism and a liquid and two-beam interferometry exposure at a wavelength of 193 nm, the substrate having the protective film formed thereon was subjected to immersion lithography (the bottom surface of the prism was in contact with the protective film through water).

[0164] The resultant substrate was subjected to PEB treatment in the same manner as that in Example 1, and the protective film was removed using perfluoro(2-butyltetrahydrofuran). Then, the resist film was developed under the same conditions as those used in Example 1.

[0165] The thus obtained resist pattern having a 65 nm line and space of 1:1 was examined under a scanning electron microscope (SEM). As a result, the pattern profile was found to be excellent such that no fluctuatio...

example 3

[0202] The resin component, acid generator, and nitrogen-containing organic compound shown below were uniformly dissolved in an organic solvent to prepare a positive resist.

[0203] As the resin component, 100 parts by mass of a polymer comprising constitutional units indicated by the above formula (40). The resin component prepared had a mass average molecular weight of 10,000.

[0204] As the acid generator, 3.5 parts by mass of triphenylsulfonium nonafluorobutanesulfonate and 1.0 part by mass of (4-methylphenyl)diphenylsulfonium trifluoromethanesulfonate were used.

[0205] As the organic solvent, 1,900 parts by mass of a mixed solvent of propylene glycol monomethyl ether acetate and ethyl lactate (mass ratio: 6:4) was used.

[0206] As the nitrogen-containing organic compound, 0.3 part by mass of triethanolamine was used.

[0207] An antireflection coating film, an ArF positive resist, and a protective film were formed on a substrate in accordance with substantially the same procedure as...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

Description

TECHNICAL FIELD [0001] The present invention relates to a material for forming a resist protecting film which is advantageously used in a liquid immersion lithography process, especially in a liquid immersion lithography process of the construction in which a resist film is exposed with lithographic exposure light through a liquid present at least on the resist film in a path of the exposure light toward the resist film wherein the liquid has a predetermined thickness and has a refractive index higher than that of air and lower than that of the resist film, thus improving the resolution of a resist pattern. The present invention also relates to a resist film having thereon a protective film formed from the material for forming a protecting film, and to a method for forming a resist pattern using the protective film. BACKGROUND ART [0002] In the fabrication of a variety of electronic devices with microstructures, such as semiconductor devices and liquid crystal devices, a lithography...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/00G03F7/039G03F7/11G03F7/20
CPCG03F7/11G03F7/70341G03F7/2041G03F7/039
Inventor HIRAYAMA, TAKUTAKASU, RYOICHISATO, MITSURUWAKIYA, KAZUMASAYOSHIDA, MASAAKITAMURA, KOKI
Owner TOKYO OHKA KOGYO CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap