Semiconductor device and method of manufacturing the same

Abstract

Provided is a semiconductor device having a semiconductor chip mounted over a substrate, in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, wherein an adhesive layer formed integral as a film is adhered to each block made of substrates corresponding to a plurality of semiconductor devices and contact bonding under heat is conducted. The adhesive layer corresponding to the plurality of semiconductor devices is thus formed continuously and with this adhesive layer, the interconnect formation surface at the end portion of the substrate is covered. Moreover, with a thermosetting resin used as the adhesive layer, the semiconductor chip and substrate are adhered by contact bonding under heat while placing the substrate on a rigid heat insulating plate. According to the present invention, heat diffusion and deformation of the substrate upon contact bonding under heat can be prevented by the rigid heat insulating plate. Upon dicing, the peeling of the interconnect from the substrate can be prevented by holding the interconnect with the adhesive layer at the end portion of the substrate.

Description

BACKGROUND OF THE INVENITON [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, particularly to a technique effective when applied to a semiconductor device having a semiconductor chip and a substrate connected via a stud bump. [0002] In semiconductor devices, as miniaturization of semiconductor chips proceeds, the number of circuits to be mounted on one semiconductor chip is increasing. For such highly integrated circuits, semiconductor devices need a larger number of connecting terminals. For example, with advance in miniaturization, semiconductor memory devices have a higher capacity and has a bus width enlarged enough to process a large capacity of data at high speed, which require more connecting terminals. [0003] To cope with such an increase in the number of connecting terminals, BGA (Ball Grid Array) type semiconductor devices adopt C4 connection (controlled Collapse Chip Connection) in which ball- or column-shaped bump electrod...

AI Technical Summary

Benefits of technology

[0015] An object of the present is to provide a technique capable of overcoming the above-described problems and preventing connection failure between a semiconductor chip and an interconnect of a substrate.

[0019] In a semiconductor device having a semiconductor chip mounted over a substrate, in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, a stress between the semiconductor chip and the substrate is relaxed by thinning the adhesive layer.

[0028] In the present invention as described above, the rigid insulating plate makes it possible to prevent heat diffusion and at the same time, prevent the deformation of the substrate upon contact bonding under heat. In addition, upon dicing, the interconnect is held by the adhesive layer at the end portion of the substrate to prevent the interconnect from peeling from the substrate.

Problems solved by technology

With high integration and function increase of semiconductor chips in recent days, the integration density of pads which will serve as external terminals of a chip increases, leading to downsizing of the pads.

When a protruding electrode having a height lowered with a trend of a semiconductor chip toward high integration is applied to a semiconductor device as described above in which an electrode and an interconnect are connected inside of an opening groove formed in a tape base material, the height of the protruding electrode is not sufficient relative to the depth of the opening groove formed in the tape base material and sometimes causes connection failure between the protruding electrode and interconnect.

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