Electronic device and semiconductor device
a technology of electronic devices and semiconductors, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve problems such as insufficient restraint, interference of signal in circuit portions, and inability to restrain
Active Publication Date: 2007-06-21
SUMITOMO ELECTRIC DEVICE INNOVATIONS
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- Description
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AI Technical Summary
Benefits of technology
"The present invention provides a semiconductor device and an electronic device that can limit the reflection of high frequency waves generated in a circuit portion of a substrate. This is achieved by providing a conductive layer on the opposite side of the substrate, which reduces the manufacturing cost and facilitates the formation of the conductive layer. The conductive layer can be made of various materials such as NiCr, TaN, or ITO, and its thickness can be adjusted to prevent reflection. This invention is useful in high-frequency-wave electronic devices that are mounted face down."
Problems solved by technology
In a high-frequency-wave semiconductor device, there are problems caused by a high frequency wave generated in the circuit portion.
Thus, in a structure of the conventional embodiment 1, it is not possible to restrain that the high frequency wave emitted from the circuit portion is reflected at an interface between the substrate and the air and goes to the circuit portion.
Thus, it is not sufficiently restrained that the high frequency wave emitted from the circuit portion is reflected and goes to the circuit portion.
And the manufacturing cost increases.
Method used
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first example
[0043] The manufacturing cost increases when the thickness of the conductive layer 12 is excessive. The electrical resistivity of the conductive layer 12 is important in order to effectively limit the reflection in the thin conductive layer 12. NiCr (nickel-chrome), TaN (tantalum nitride) and ITO (indium tin oxide) having a resistivity of 1.0×10−6 Ωm, 2.5×10−6 Ωm and 2.0×10−6 Ωm respectively were selected, as a conductive material having a resistivity of approximately 1.0×10−6 Ωm. A NiCr layer, a TaN layer and an ITO layer were used as the conductive layer 12. A gallium arsenide (GaAs) substrate, a silicon (Si) substrate, a silicon carbide (SiC) substrate, a sapphire (Al2O3) substrate and a gallium nitride (GaN) substrate having a relative dielectric permeability of 13.1, 10.9, 10, 10 and 12.2 respectively were used as the substrate 10. And an amplifier was manufactured.
[0044]FIG. 3A through FIG. 3E illustrate a cross sectional view of a semiconductor device showing a manufacturing...
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An electronic device has a substrate, a conductive layer and a substrate mounted portion. The substrate has a circuit portion used from 60 GHz to 80 GHz. The conductive layer is provided directly on a face of the substrate that is opposite side of the circuit portion. The face having the circuit portion of the substrate is mounted face down on the substrate mounted portion. A thickness of the conductive layer is a thickness where a sheet resistance of the conductive layer is ¼ to 4 times of a resistance component of an impedance of the substrate.
Description
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] This invention generally relates to an electronic device and a semiconductor device, and in particular, relates to an electronic device and a semiconductor device using a high frequency wave. [0003] 2. Description of the Related Art [0004] Recently, radio wave such as a microwave or a milliwave (high frequency wave) is used in a communication field including a cellular phone. The high frequency wave is used for a radar or the like measuring a distance between two cars. A high-frequency-wave semiconductor device is often downsized, and is often mounted face down in order to restrain a loss of a signal. The high-frequency-wave semiconductor device is used for an electronic device using a high frequency wave. [0005] The face-down mounting is a method of mounting a face, where a circuit portion using a high frequency wave is provided, on a wiring pattern of a package acting as a substrate mounted portion. Hereinafter, t...
Claims
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IPC IPC(8): H01L23/12
CPCH01L23/04H01L23/10H01L2224/94H01L23/20H01L23/552H01L23/66H01L2224/04026H01L2224/274H01L2924/01078H01L2924/01079H01L2924/10253H01L2924/10272H01L2924/10329H01L2924/1033H01L2924/1423H01L2924/16152H01L2924/3011H01L2924/3025H01L2224/0401H01L2224/1146H01L2224/13144H01L2224/16225H01L2224/11H01L2224/03
Inventor NUNOKAWA, MITSUJI
Owner SUMITOMO ELECTRIC DEVICE INNOVATIONS