Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device which can effectively suppress a short channel effect and junction leakage is provided. A semiconductor device includes a field effect transistor. The field effect transistor includes a first semiconductor region of a first conductivity type, a gate electrode formed on a gate insulating film, and source and drain electrodes. The field effect transistor also includes second semiconductor regions of a second conductivity type. The field effect transistor further includes third semiconductor regions of the second conductivity type having an impurity concentration higher than that of the second semiconductor region and formed between the source electrode and the first and second semiconductor regions and between the drain electrode and the first and second semiconductor regions, and side wall insulating films formed on both the side surfaces of the gate electrode. The source electrode and the drain electrode are separated from the side wall insulating films.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2006-171593 filed on Jun. 21, 2006 in Japan, the entire contents of which are incorporated herein by reference. FIELD OF THE INVENTION [0002] The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device having a MIS field effect transistor the source and drain portions of which are improved and a method of manufacturing the same. BACKGROUND OF THE INVENTION [0003] To advance the performance of a semiconductor integrated circuit, the performance of a field effect transistor serving as a constituent device must be advanced. For advancing the device performance, scaling down of the device is effective. For this reason, device performance has been improved by scaling down the device by micro patterning. However, as micro patterning advanced, a tech...

AI Technical Summary

Benefits of technology

[0006] The present invention has been made in consideration of the above circumstances. It is an object of the present invention to provide a semiconductor device having a field effect transistor with a device structure which can achieve improvement of performance by increasing an injection rate of carriers while effectively suppressing a short channel effect and junction leakage, and a method of manufacturing the semiconductor device.

[0011] According to the present invention, there can be provided a semiconductor device having a field effect transistor with a device structure which can achieve improvement of performance by increasing an injection rate of carriers while effectively suppressing a short channel effect and junction leakage, and a method of manufacturing the semiconductor device.

Problems solved by technology

However, as micro patterning advanced, a technical barrier to be solved becomes high at the same time.

For this reason, improvement of device performance relying only to micro patterning is very difficult.

However, a device structure using a conventional Schottky source-drain has the following problem.

That is, the merit of the Schottky source-drain which can inject high-speed carriers into a channel is not always maximally utilized.

However, the merit of the Schottky source-drain which can inject high-speed carriers into a channel is not always maximally utilized.

However, up to now, it cannot be said that the device structure is optimized.

Images