Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device which can effectively suppress a short channel effect and junction leakage is provided. A semiconductor device includes a field effect transistor. The field effect transistor includes a first semiconductor region of a first conductivity type, a gate electrode formed on a gate insulating film, and source and drain electrodes. The field effect transistor also includes second semiconductor regions of a second conductivity type. The field effect transistor further includes third semiconductor regions of the second conductivity type having an impurity concentration higher than that of the second semiconductor region and formed between the source electrode and the first and second semiconductor regions and between the drain electrode and the first and second semiconductor regions, and side wall insulating films formed on both the side surfaces of the gate electrode. The source electrode and the drain electrode are separated from the side wall insulating films.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2006-171593 filed on Jun. 21, 2006 in Japan, the entire contents of which are incorporated herein by reference. FIELD OF THE INVENTION [0002] The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device having a MIS field effect transistor the source and drain portions of which are improved and a method of manufacturing the same. BACKGROUND OF THE INVENTION [0003] To advance the performance of a semiconductor integrated circuit, the performance of a field effect transistor serving as a constituent device must be advanced. For advancing the device performance, scaling down of the device is effective. For this reason, device performance has been improved by scaling down the device by micro patterning. However, as micro patterning advanced, a tech...

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Benefits of technology

[0006] The present invention has been made in consideration of the above circumstances. It is an object of the present invention to provide a semiconductor device having a field effect transistor with a device structure which can achieve improvement of performance by increasing an injection rate of carriers while effectively suppressing a short channel effect and junction leakage, and a method of manufacturing the semiconductor device.

[0007] A semiconductor device according to an embodiment of the present invention comprises a field effect transistor including: a first semiconductor region of a first conductivity type having a surface portion on which a channel region is formed; a gate electrode formed on the channel region, a gate insulating film in between the gate electrode and the channel region; a source electrode and a drain electrode formed on both the sides of the channel region; second semiconductor regions of a second conductivity type formed between the source electrode and the channel region and between the drain electrode and the channel region to serve as extension regions of a source and a drain; third semiconductor regions of the second conductivity type formed between the source electrode and the first and second semiconductor regions and between the drain electrode and the first and second semiconductor regions and having an impurity concentration higher than that of the second semiconductor region; and side wall insulating films formed on both the side surfaces of the gate electrode, the side wall insulating films being separated from the source electrode and the drain electrode.

[0008] A method for producing the field effect transistor according to another embodiment of the present invention comprises: forming a gate electrode on a first semiconductor region of a first conductivity type, a gate insulating film in between, and side wall insulating films on both side surfaces of the gate electrode; ion-implanting an impurity in the first semiconductor region by using the gate electrode and the side wall insulating film as masks to form second semiconductor regions of a second conductivity type serving as extension regions of a source and a drain; forming second side wall insulating films on both side surfaces of the side wall insulating film; and siliciding a part of the second semiconductor region of the second conductivity type to a region deeper than the second semiconductor region to form a source electrode and a drain electrode, and forming third semiconductor regions of the second conductivity type having an impurity concentration higher than that of the second semiconductor region in interfaces between the source electrode and the first and second semiconductor regions and between the drain electrode and the first and second semiconductor regions by segregation from silicide.

[0009] A method for producing the field effect transistor according to still another embodiment of the present invention comprises: forming a ga

Problems solved by technology

However, as micro patterning advanced, a technical barrier to be solved becomes high at the same time.

For this reason, improvement of device performance relying only to micro patterning is very difficult.

However, a device structure using a conventional Schottky source-drain has the following problem.

That is, the merit of

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