Film formation apparatus for semiconductor process and method for using the same
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Publication Date
- 2008-06-05
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a film formation apparatus for a semiconductor process for forming a silicon nitride film on a target substrate, such as a semiconductor wafer, and also to a method for using the apparatus. The term “semiconductor process” used herein includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target substrate, such as a semiconductor wafer or a glass substrate used for an FPD (Flat Panel Display), e.g., an LCD (Liquid Crystal Display), by forming semiconductor layers, insulating layers, and conductive layers in predetermined patterns on the target substrate.
[0003] 2. Description of the Related Art
[0004] In manufacturing semiconductor devices, a process, such as CVD (Chemical Vapor Deposition), is performed to form a thin film, such as a silicon ni...