Film formation apparatus for semiconductor process and method for using the same

Abstract

A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of quartz and silicon carbide. The method includes performing a film formation process to form a silicon nitride film on a product target substrate inside the process container, and then, unloading the product target substrate from the process container. Thereafter, the method includes supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen, at a part of the by-product films from a surface thereof to a predetermined depth.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a film formation apparatus for a semiconductor process for forming a silicon nitride film on a target substrate, such as a semiconductor wafer, and also to a method for using the apparatus. The term “semiconductor process” used herein includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target substrate, such as a semiconductor wafer or a glass substrate used for an FPD (Flat Panel Display), e.g., an LCD (Liquid Crystal Display), by forming semiconductor layers, insulating layers, and conductive layers in predetermined patterns on the target substrate.[0003]2. Description of the Related Art[0004]In manufacturing semiconductor devices, a process, such as CVD (Chemical Vapor Deposition), is performed to form a thin film, such as a silicon ni...

AI Technical Summary

Benefits of technology

[0012]An object of the present invention is to provide a film formation apparatus for a semiconductor process and a method for using the same, which can prevent particle generation without lowering the productivity.

Problems solved by technology

If the film formation process is continued while by-product films are present on the inner surface of the process container, a stress is generated and causes peeling of some of the by-product films and the quartz of the process container due to a difference in coefficient of thermal expansion between the quartz and by-product films.

Consequently, particles are generated, and may decrease the yield of semiconductor devices to be fabricated and / or deteriorate some components of the processing apparatus.

However, in this case, the downtime of the heat processing apparatus becomes larger and thereby deteriorates productivity.

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