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InSb NANOPARTICLE

a nanoparticle and nanoparticle technology, applied in the field of insb nanoparticles, can solve the problems of difficult to use the secondarily aggregated insb nanoparticles, difficult to obtain coating films, and difficult to use ink jet methods or printing methods, etc., and achieve the effect of high mobility

Inactive Publication Date: 2009-01-08
TAKE SEIJI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides an InSb nanoparticle, an InSb nanoparticle dispersion, and a method for producing an InSb nanoparticle. The InSb nanoparticle has the ability to be dispersed and independent in a dispersion medium, making it easy to form film or patterns on the surface. The nanoparticle has residues of a hydrophilic group and a hydrophobic group, which prevents aggregation and facilitates patterning. The dispersion medium can be a nonpolar solvent or a polar solvent, depending on the configuration. The invention also provides a method for producing an InSb nanoparticle using the hot soap method. Overall, the invention provides a simple and effective way to produce and disperse InSb nanoparticles for various applications.

Problems solved by technology

However, it is difficult to use the secondarily aggregated InSb nanoparticles as mentioned above to the ink jet method or the printing method because an even coating film can hardly be obtained.
Furthermore, blockage of the nozzle is generated in the case of the ink jet method, thus it is problematic.
However, according to these methods, since the InSb nanoparticles are fixed on the substrate, also in this case, it can hardly be used for the ink jet method or the printing method because it is difficult to disperse the InSb nanoparticles in a dispersion medium at the time of preparing the coating solution.
Moreover, a problem is also involved in that the substrates capable of forming the InSb nanoparticles are limited and expensive.
Therefore, since the InSb nanoparticles are fixed on the SiO2 film, also as in the case mentioned above, it can hardly be used for the ink jet method or the printing method.
However, according to the method, not only the InSb nanoparticles but also the Sb nanoparticles are formed, and thus it is difficult to obtain only the InSb nanoparticles.
Moreover, since the InSb nanoparticles are fixed on the amorphous carbon film, as in the case, it can hardly be used for the ink jet method of the printing method.
Furthermore, another problem is involved in that the substrates capable of forming the InSb nanoparticles are limited.

Method used

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Experimental program
Comparison scheme
Effect test

first embodiment

1. First Embodiment

[0033]An InSb nanoparticle of this embodiment has the average particle size in a range of 2 nm to 200 nm, capable of being j dispersed and to be dispersed independently in a dispersion medium.

[0034]FIGS. 1A and 1B show an example of transmission electron microscope (TEM) photographs of an InSb nanoparticle of this embodiment. As shown in FIGS. 1A and 1B, as for the InSb nanoparticle of this embodiment, each particle is dispersed independently without secondary aggregation. Accordingly, since the InSb nanoparticle is dispersed independently, it can be dispersed stably in a dispersion medium compared with the case of the secondary aggregated InSb nanoparticle. Therefore, the InSb nanoparticle dispersed independently can be used preferably as a semiconductor forming material.

[0035]The independent dispersion of the InSb nanoparticle can be confirmed by the observation using the transmission electron microscope (TEM) as mentioned above. For example, as shown by the TEM...

second embodiment

2. Second Embodiment

[0058]The InSb nanoparticle of this embodiment has an organic compound having one or more residues of a hydrophilic group and a hydrophobic group in one molecule adhered on the surface.

[0059]In this embodiment, as it is mentioned in the item of the first embodiment, since the predetermined organic compound is adhered onto the surface of the InSb nanoparticle, aggregation of the InSb nanoparticle can be prevented. Thereby, since it can be dispersed stably in a dispersion medium, the InSb nanoparticle of this embodiment can be used preferably as a semiconductor forming material.

[0060]Since the other points of the InSb nanoparticle is the same as those of the first embodiment, the explanation thereof is not repeated here.

B. InSb Nanoparticle Dispersion

[0061]Next, the InSb nanoparticle dispersion of the present invention will be explained. The InSb nanoparticle dispersion of the present invention contains an InSb nanoparticle and a dispersion medium.

[0062]The InSb na...

example 1

[0112]The reaction field of the hot soap method was provided by the below dispersing agent.

[0113]

1,2-hexadecane diol (produced by ALDRICH)1.2gOleic acid (produced by ALDRICH)1.2gHexadecyl amine (produced by KANTO KAGAKU.)18g

[0114]The above-mentioned dispersing agent was mixed in a flask and heated to 300° C. after the substitution by an argon gas atmosphere.

[0115]Next, the precursor mixture liquid was prepared by the following composition.

[0116]

n-Butoxy antimony (produced by AZmax.co)0.060gIndium acetyl acetonate (produced by ALDRICH)0.090g1,2-Dichlorobenzene (produced by KANTO KAGAKU.)0.70g

[0117]After the injection of the precursor mixture liquid to the reaction field, the temperature was raised to 295° C. so as to be maintained at the temperature for 30 minutes. Thereafter, the reaction solution was cooled down by the air. At the time it was cooled down to 60° C., 50 ml of an ethanol was added. Then, after separating the black precipitate by the centrifugal separation, a purificat...

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Abstract

The main object of the present invention is to provide an InSb nanoparticle to be dispersed independently, InSb nanoparticle dispersion and a method for producing an InSb nanoparticle.The object of the present invention is achieved by providing an InSb nanoparticle having an average particle size in a range of 2 nm to 200 nm, capable of being dispersed and to be dispersed independently in a dispersion medium.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to an InSb nanoparticle to be used for a semiconductor, or the like.[0003]2. Description of the Related Art[0004]Since the InSb nanoparticles have a mobility of about 78,000 cm2 / Vs, which is larger than the mobility of Si of 1,450 cm2 / Vs, attention is paid thereto for the utilization to a semiconductor so that various synthesis methods have been studied. The synthesis methods for the inorganic nanoparticles can be roughly classified into the solid phase method, the liquid phase method and the gas phase method. As to the synthesis methods for the InSb nanoparticles, the liquid phase method and the gas phase method are known.[0005]As to the synthesis method using the liquid phase method, for example, Solvothermal Reduction Synthesis reports the synthesis of the InSb nanoparticles of a 30 nm to 50 nm particle size by heating In and SbCl3 to 180° C. to 300° C. with a benzene provided as the sol...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B22F9/24
CPCC22C12/00
Inventor TAKE, SEIJI
Owner TAKE SEIJI