Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device having external connection terminals and method of manufacturing the same

Inactive Publication Date: 2009-01-29
RENESAS ELECTRONICS CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0018]According to the present invention, the external connection terminals include oxide films provided with through holes, and thus, the external connection terminals are melted in the reflow process bonding to other electrical connection members such as a substrate so that the shape of the external connection terminals transform into sphere, which means that the surface area of the external connection terminals becomes minimum. Therefore, the oxide film formed on the surface of the external connection terminals is broken to provide high electrical conductivity. Accordingly, it becomes unnecessary to remove oxide films when the external connection terminals are bonded to an electrical connection member so that static electricity (electrostatic breakdown) can be prevented. Therefore, it becomes possible to prevent the quality of the semiconductor chip from lowering.
[0022]According to this invention, the external connection terminals include oxide films provided with through holes, and thus, the external connection terminals are melted in the reflow process bonding to other electrical connection members such as a substrate so that the shape of the external connection terminals transform into sphere, which means that the surface area of the external connection terminals becomes minimum. Therefore, the oxide film formed on the surface of the external connection terminals is broken to provide high electrical conductivity. As a result, external connection terminals connected on a semiconductor chip and an electrical connection member such as a substrate can be bonded in high electrically conductivity so that the semiconductor chip can be mounted on the electrical connection member without removing the oxide films. Accordingly, it becomes unnecessary to remove the oxide films at the time of mounting, and static electricity (electrostatic breakdown) can be prevented. Therefore, it becomes possible to prevent the quality of the semiconductor chip from lowering.
[0024]According to the present invention, a measure against the oxidation of external connection terminals can be taken while preventing static electricity. As a result, the yield in assembly and the quality of bonding can be increased while reducing defects in mounting.

Problems solved by technology

In the case of soldering, the oxide film formed on the surface of the solder makes the wettability and spreadability poor, and defects in mounting (failure in fusion of solder) easily occur between the bonding agent applied to the side to be mounted and the solder at the time of reflow for mounting in accordance with the specifications of the customer.
Accordingly, there may be a problem where electrostatic breakdown is caused and the quality of the semiconductor chip is lowered.
In addition, the above described problem is not limited to the cases where a semiconductor chip is connected by means of solder, but becomes a common problem in the connection of a semiconductor chip having external connection terminals made of a material other than solder.
Accordingly, a problem where defects in mounting (failure infusion of solder) occur has become severe.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device having external connection terminals and method of manufacturing the same
  • Semiconductor device having external connection terminals and method of manufacturing the same
  • Semiconductor device having external connection terminals and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032]The invention will be now described herein with reference to illustrative embodiments. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiments illustrated for explanatory purposes.

[0033]In the following, an embodiment of the present invention is described in reference to the drawings. Here, the same reference numerals are given to the same components in all the drawings, and the descriptions will not be repeated.

[0034]FIGS. 1A, 1B, and 1C are views schematically showing a semiconductor device 1 according to the present embodiment. FIG. 1A is a view schematically showing the semiconductor device 1 according to the present embodiment.

[0035]FIG. 1B is a cross sectional view along line B-B′ of FIG. 1A. FIG. 1C is a cross sectional view along line C-C′ of FIG. 1A. The semiconductor device 1 in the present embodiment has a semiconductor element ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In one embodiment, a semiconductor device has a semiconductor element made up of a semiconductor chip, first solder balls provided on the semiconductor chip and a BGA substrate on which the semiconductor chip is mounted via the first solder balls. Furthermore, the semiconductor device has external terminals on a surface of the BGA substrate opposing to a surface on which the semiconductor chip is mounted. The external terminals include oxide films provided with through holes.

Description

[0001]This application is based on Japanese patent application No. 2007-191007, the content of which is incorporated hereinto by reference.BACKGROUND[0002]1. Technical Field[0003]The present invention relates to a semiconductor device, especially a semiconductor device having external terminals, and a method of manufacturing the same.[0004]2. Related Art[0005]Conventional connections between semiconductor chips and electrically connectable members such as a substrate require the formation of a thin metal film for the connection. The thin metal film is generally formed through sputtering or vapor deposition. In the connection using this thin metal film, for example, solder having a high melting point is used. In the case of soldering, the oxide film formed on the surface of the solder makes the wettability and spreadability poor, and defects in mounting (failure in fusion of solder) easily occur between the bonding agent applied to the side to be mounted and the solder at the time of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/488H01L21/60
CPCH01L23/60H01L2224/13566H01L24/81H01L2224/16H01L2224/29111H01L2224/29144H01L2224/8121H01L2224/81815H01L2224/83102H01L2224/92125H01L2924/01015H01L2924/01029H01L2924/01033H01L2924/01047H01L2924/01079H01L2924/01082H01L2924/15311H05K3/3457H05K2203/0221H05K2203/0315H01L24/11H01L2224/131H01L2224/11849H01L2224/13686H01L2224/81191H01L2924/00013H01L2224/81026H01L2224/1184H01L24/13H01L2924/01005H01L2924/01006H01L2924/0105H01L2924/014H01L2224/81047H01L2224/13553H01L2924/01083H01L2924/053H01L2224/29099H01L2924/12044H01L2924/00
Inventor KAWASHIRO, FUMIYOSHI
Owner RENESAS ELECTRONICS CORP