Single crystalline graphene sheet and process of preparing the same

a single crystal, graphene sheet technology, applied in the direction of polycrystalline material growth, gel state, synthetic resin layered products, etc., can solve the problems of high cost of carbon nanotubes, difficulty in separating single-walled carbon nanotubes, and inability to include a uniform number of layers in the separated graphene sh

Inactive Publication Date: 2009-06-18
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, carbon nanotubes are expensive due to low yields during synthesis and purification processes.
However, separating single wall carbon nanotubes can be problematic.
In this case, the separated graphene sheet does not include a uniform number of layers, and the ripped portions do not have a uniform shape.
Furthermore, a large-sized graphene sheet cannot be prepared using the micromechanical method.
However, the SiC single crystal material used as a starting material in SiC thermal decomposition is very expensive, and formation of a large-sized graphene sheet can be problematic.

Method used

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  • Single crystalline graphene sheet and process of preparing the same
  • Single crystalline graphene sheet and process of preparing the same
  • Single crystalline graphene sheet and process of preparing the same

Examples

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example 1

[0089]A single-crystal Ni thin film having a diameter of 1.2 cm and a thickness of 0.2 mm (having a (111) surface, Matec, Inc.) was placed in a reaction chamber, and heat-treated at 700° C. for 1 hour while flowing hydrogen into the chamber at 60 sccm to remove an oxide formed on the surface of the single-crystal Ni thin film. Then, the single crystal Ni thin film was heat-treated at 750° C. for 2 minutes using a halogen lamp heat source while introducing acetylene gas and hydrogen gas into the chamber at 5 sccm and 45 sccm respectively to form graphene on the single-crystal Ni thin film graphitizing catalyst.

[0090]Then, the heat source was removed and the chamber was naturally cooled to grow the graphene to a constant thickness, thereby forming a graphene sheet having a diameter of 1.2 cm and about 7 layers.

[0091]Then, the single-crystal Ni thin film on which the graphene sheet formed was dissolved by treatment in 0.1 M HCl for 24 hours to remove the Ni thin film and yield the sing...

example 2

[0093]A Ni single crystal having a diameter of 1.2 cm and a thickness of 0.2 mm (having a (111) surface, Matec, Inc.) was placed in a reaction chamber on a _ substrate, and heat-treated at 700° C. for 1 hour while flowing hydrogen into the chamber at 60 sccm to remove an oxide formed on the surface of the single crystalline Ni. Then, the Ni single-crystal was heat-treated at 900° C. for 2 minutes using a halogen lamp heat source while introducing acetylene gas and hydrogen gas into the chamber at 5 sccm and 45 sccm respectively to form graphene.

[0094]Then, the heat source was removed and the chamber was naturally cooled to grow the graphene to a constant thickness, thereby forming a graphene sheet having a diameter of 1.2 cm and about 7 layers.

[0095]Then, the substrate on which the graphene sheet is formed was dissolved by treatment in 0.1 M HCl for 24 hours to remove the Ni thin film and yield the single-crystal graphene sheet.

[0096]FIG. 6 is a graph illustrating a Raman spectrum o...

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Abstract

A single-crystal graphene sheet includes a polycyclic aromatic molecule wherein a plurality of carbon atoms are covalently bound to each other, the single-crystal graphene sheet comprising between about 1 layer to about 300 layers; and wherein a peak ratio of a Raman D band intensity to a Raman G band intensity is equal to or less than 0.2. Also described is a method for preparing a single-crystal graphene sheet, the method includes forming a catalyst layer, which includes a single-crystal graphitizing metal catalyst sheet; disposing a carbonaceous material on the catalyst layer; and heat-treating the catalyst layer and the carbonaceous material in at least one of an inert atmosphere and a reducing atmosphere. Also described is a transparent electrode including a single-crystal graphene sheet.

Description

[0001]This application claims priority to Korean Patent Application No. 10-2007-0132682, filed on Dec. 17, 2007, and all the benefits accruing therefrom under 35 U.S.C. § 119, the contents of which in their entirety are herein incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]This disclosure relates to a single-crystal graphene sheet and a process of preparing the same.[0004]2. Description of the Related Art[0005]Generally, graphite is a stack of two-dimensional graphene sheets formed from a planar array of carbon atoms bonded to form hexagonal structures. Recently, testing of graphene sheets revealed beneficial properties of single or multiple-layered graphene sheets. One beneficial property of graphene is that electrons flow in an entirely unhindered fashion in a graphene sheet, which is to say that the electrons flow at the velocity of light in a vacuum. In addition, graphene sheets exhibit an unusual half-integer quantum Hall effect for bo...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): D01F9/12C30B1/02B32B9/00
CPCB82Y30/00B82Y40/00C30B29/02C01B2204/04C01B31/0461C01B32/188C30B29/36C30B1/10
Inventor CHOI, JAE-YOUNGSHIN, HYEON-JINYOON, SEON-MIHAN, JAI-YONG
Owner SAMSUNG ELECTRONICS CO LTD
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