Plasma processing apparatus

a processing apparatus and plasma technology, applied in the direction of electrical apparatus, basic electric elements, electric discharge tubes, etc., can solve the problems of difficult to maintain the long-term stability and processing properties of the wafer edge portion, and the required processing accuracy is difficult to maintain. maintain the processing properties, suppress the time-based change, and minimize the influence of tilting
US20100006225A1Inactive Publication Date: 2010-01-14HITACHI HIGH-TECH CORP
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
HITACHI HIGH-TECH CORP
Publication Date
2010-01-14
Estimated Expiration
Not applicable · inactive patent

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Abstract

To make it possible to suppress deterioration of processing properties of a sample to be processed due to the distortion of ion sheath at the end portion of the sample to be processed or possible to maintain the condition for suppressing the deterioration, so that the acquisition rate of acceptable products can be increased, so as to thereby improve the yield. In a plasma processing apparatus, a minute hole 10 is provided in a focus ring 9 in the vicinity of the inner circumferential portion thereof. Current detecting means 11 is arranged in the bottom portion of the minute hole 10. A high-frequency power is supplied to the focus ring 9 via high-frequency power distributing means 16. A state of distortion of an ion sheath 18 is detected from an amount of current which is changed according to the amount of the high-frequency power supplied to the focus ring 9 and which is detected by current detecting means 11. Further, the amount of high-frequency power supplied to the focus ring 9 is controlled by a control section 21 so as to correct the detected distortion state.
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Description

[0001] The present application is based on and claims priority of Japanese patent application No. 2008-181287 filed on Jul. 11, 2008, the entire contents of which are hereby incorporated by reference.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor device. More particularly, the present invention relates to a plasma processing apparatus using a dry etching technique for etching, by using the plasma, semiconductor materials, such as silicon and a silicon oxide film, according to a mask pattern shape formed of a resist material, and the like.

[0004] 2. Description of the Related Art

[0005] The dry etching is a semiconductor fine processing method in which process gases are introduced into a vacuum chamber having vacuum evacuation means, so as to be converted into plasma by electromagnetic waves, and in which the surface of a sample to be processed other than a masked po...

Claims

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