Semiconductor Device

a technology of semiconductors and devices, applied in the field of semiconductor devices, can solve the problems of increasing power consumption, reducing the whole speed of transistors, and the method of forming gate gates using cnts, and achieving the effect of preventing short channel effects and reducing gate resistan

Inactive Publication Date: 2011-10-27
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach reduces gate resistance and prevents short channel effects, enhancing the performance and efficiency of semiconductor devices by utilizing CNTs as gate forming materials.

Problems solved by technology

However, because these gate forming materials have a large resistance, the whole speed of the transistor is reduced and power consumption is increased.
A method for forming a gate using a CNT, however, has not been commercialized.
As a result, it is difficult to control subsequent processes after formation of the CNT gate.

Method used

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Embodiment Construction

[0019]The invention will be described in detail with reference to the drawings. In the drawings, the thickness of layers and regions is exaggerated for clarity, and a layer can be directly formed over a different layer or a substrate or a third layer can be formed between the different layer and the substrate.

[0020]Referring to FIG. 1a, a photoresist film (not shown) is formed over a semiconductor substrate 100. A first photoresist pattern 110 can be formed, for example, by performing an exposing and developing process on the photoresist film, using a recess mask (not shown).

[0021]Referring to FIG. 1b, the semiconductor substrate 100 is etched using the first photoresist pattern 110 as an etching mask to form a recess 120. The recess 120 can be formed, for example, by an isotropic etching process.

[0022]Referring to FIGS. 1c and 1d, an insulating film 130 is formed over the semiconductor substrate 100 including the recess 120. A CNT seed layer 140 is formed over the insulating film 1...

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Abstract

Disclosed herein are a semiconductor device and a method for manufacturing the same. The method includes forming a gate structure using a carbon nano tube (CNT). In order to prevent reduction of the gate resistance and the short channel effect, a CNT gate having a grown CNT pattern with a half-cylinder shape is formed over a recess of a semiconductor substrate. The CNT gate has the same effect as a recess gate, and can prevent the short channel effect, improve the speed, and the lower power characteristic of semiconductor devices.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This is a division of U.S. application Ser. No. 12 / 327,346 filed Dec. 3, 2008, which claims the priority benefit under USC 119 of KR 10-2008-0041443 filed May 2, 2008, the entire respective disclosures of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]Depending on electric characteristics, nano tubes can be embodied into electric elements such as diodes and transistors. A carbon nano tube (CNT), for example, is a graphite hollow cylinder having a diameter on the order of several angstroms. Structurally, the CNT is similar to a hexagonal lattice of cylinder-type carbon. The CNT has a quantum characteristic at a low temperature, and the characteristics of a metal or a semiconductor, depending on its chirality.[0003]The metal type CNT can carry a current of high density with a given resistance. The semiconductor type CNT can be switched on and off like a field effect transistor (FET). The two types of nano tubes ...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L29/78
CPCB82Y10/00Y10S977/742H10K85/221H10K10/481H01L21/18B82B3/00B82Y40/00
InventorJANG, CHI HWANYEO, TAE YEON
OwnerSK HYNIX INC