Lid opening/closing system for closed container, and substrate processing method using the same

Abstract

The partial pressure of an oxidizing gas within a FOUP fixed to a FIMS system and placed in an open state is prevented from increasing with the lapse of time. To that end, a gas supply port is arranged in the bottom face of the FOUP to enable nitrogen supply into the FOUP through the gas supply port with a pod mounted on the FIMS system. A nitrogen supply system for supplying nitrogen with the FOUP mounted is controlled so as to make a nitrogen supply at such a low flow rate and pressure as to be able to prevent dust or the like having such sizes as to possibly cause problems in wiring lines to be formed on a wafer from being stirred up from the gas supply port or the like.

Description

[0001]This application claims the benefit of Japanese Patent Application Nos. 2012-264903 filed Dec. 4, 2012, 2013-129664 filed Jun. 20, 2013, U.S. provisional Application No. 61 / 842,600 filed Jul. 3, 2013 and Japanese Patent Application No. 2013-243838 filed Nov. 26, 2013, which are hereby incorporated by reference herein in their entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a so-called FIMS (Front-Opening Interface Mechanical Standard) system used when wafers held in a transfer container referred to as a pod are transferred between semiconductor processing apparatuses in a semiconductor manufacturing process or the like. More specifically, the present invention relates to a FIMS system, namely, a lid opening / closing system, in which a pod referred to as a FOUP (Front-Opening Unified Pod) which is a closed container for housing wafers is mounted and the lid of the pod is opened / closed to transfer wafers thereto / therefrom,...

AI Technical Summary

Benefits of technology

The invention allows for faster replacement of inert gas within a pod by combining two different types of replacement. This prevents an increase in oxygen concentration while the pod is on a mounting stage. The technical effect is improved efficiency and better preservation of the inert gas atmosphere.

Problems solved by technology

If such air goes into the pod, however, there arises the possibility that a wafer surface is oxidized due to oxygen or moisture in the air.

Thus, there has been the possibility of fine elements failing to have desired performance due to the presence of such oxide films.

Accordingly, oxygen concentration control during, for example, a standby time for the pod to wait for processing on the mounting stage is virtually impossible.

Here, a high-flow rate inert gas supply is not allowed from cost and safety points of view if, for example, time taken to perform processing on a wafer alone is long.

If the pod is increased in size to be compatible with large-diameter wafers, it is generally difficult to keep the internal space of the pod in an airtight state.

Thus, there is concern that the leakage of internal gases or the ingress of external gases become increasingly likely to occur during such a standby time.

Since the pod has been increased in size as described above, however, it is increasingly difficult to secure a sufficient amount of inert gas to be supplied.

This may cause dust or the like adhering to the vicinity of the port to be stirred up by the supplied gas, thus possibly contaminating wafers.

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