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Thin Diamond Film Bonding Providing Low Vapor Pressure at High Temperature

a diamond film and high temperature technology, applied in the direction of superimposed coating process, soldering apparatus, manufacturing tools, etc., can solve the problems of high vapor pressure of suitable metals at their melting point, difficult to achieve for a fragile part, and forming metal carbides that are relatively inert and difficult to remove chemically

Active Publication Date: 2015-02-12
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention aims to bond a thin film of diamond to a thick diamond substrate without contaminating the surface. This ensures that the bonded diamond is not compromised when held at high temperature in vacuum and may be used in various applications.

Problems solved by technology

Thermo-compression bonding requires application of very high pressure at high temperature, and is thus difficult to accomplish for a fragile part.
However, the vapor pressures of suitable metals at their melting points are high enough to contaminate the diamond.
When contaminated with metals at high temperature, the diamond typically reacts with the metal, forming metal carbides that are relatively inert and difficult to remove chemically without also removing the bond metal.
For example, braze tests using Cu:Ag (72:28 wt %) eutectic alloy, which melts at 779° C., resulted in large amounts of both Cu and Ag on the exposed diamond surface, and these metals could not be completely removed using solutions that dissolve pure Cu and pure Ag.
Thus brazing is not an appropriate bonding method.

Method used

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  • Thin Diamond Film Bonding Providing Low Vapor Pressure at High Temperature
  • Thin Diamond Film Bonding Providing Low Vapor Pressure at High Temperature
  • Thin Diamond Film Bonding Providing Low Vapor Pressure at High Temperature

Examples

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example

[0028]Since neither Pd nor Sn will react readily with diamond, we first coat the diamond surfaces in the areas to be bonded with an adhesion layer of Chromium (Cr). The Cr layer also forms an electric contact to the thin diamond film, needed to remove charge generated by the primary electron beam.

[0029]The Cr is thin enough to allow the primary electron beam to pass through it without excessive energy loss. The Cr layer thickness can be varied somewhat depending on the intended primary beam energy and current. A thinner layer may be used for very low primary beam energies or a thicker layer can be used to reduce resistive loss.

[0030]The Cr coating on the substrate is patterned using a shadow mask; the Cr coating on the thin diamond film is not patterned. Before depositing the Cr using a magnetron sputter source, we remove adsorbed gases from the diamond by heating inside the vacuum chamber to 500° C. until the pressure drops below 2×10−7 torr. This step ensures the Cr will chemicall...

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Abstract

This disclosure concerns bonding a thin film of diamond to a second thick diamond substrate in a way that does not cause the exposed (un-bonded) diamond surface to become contaminated by the bonding process or when the bonded diamond is held at high temperature for many hours in vacuum.

Description

[0001]This application claims priority to and the benefits of U.S. Patent Application No. 61 / 864,854 filed on Aug. 12, 2013, the entirety of which is herein incorporated by reference.BACKGROUND[0002]This disclosure concerns a method of bonding a thin film of diamond to a second thick diamond substrate in a way that does not cause the exposed (un-bonded) diamond surface to become contaminated by the bonding process or when the bonded diamond is held at high temperature for many hours in vacuum.[0003]In addition, this process allows the thin film diamond to be bonded over a hole in the substrate diamond.[0004]In addition, the process provides a metal surface suitable for wire bonding on the surface of the thick diamond substrate adjacent to the thin film diamond but electrically isolated from it.[0005]In addition, the process provides a bond material that is inert enough to withstand subsequent processing such as photo-resist development and most chemical etches.[0006]Common bonding m...

Claims

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Application Information

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IPC IPC(8): B32B37/24B32B38/18B32B9/00B32B15/04B32B9/04B32B37/12B32B38/00
CPCB32B9/007B32B2311/16B32B2311/09B32B2311/00B32B2309/68B32B2250/05B32B2038/0052B32B2037/246B32B38/1858B32B38/0036B32B37/24B32B37/12B32B15/043B32B9/041B32B2313/04Y10T428/12542B23K2103/50H01J1/34B23K1/0016B23K1/19B32B9/04B32B37/04B32B2037/243B32B2255/205B32B2255/28B32B2309/02C23C28/023C23C30/00H01J37/073
Inventor SHAW, JONATHAN L.HANNA, JEREMY
Owner THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY
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