Moisture resistant photovoltaic devices with exposed conductive grid
a photovoltaic device and conductive grid technology, applied in the field of photovoltaic devices with exposed conductive grids, can solve the problems of reducing the service life of the device, so as to improve the service life, improve the adhesion, and improve the resistance to delamination, rupture, and/or moisture intrusion.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
example 1
[0066]On 1″×1″ pieces of soda-lime glass, substrates comprising a sputter-deposited thin film of aluminum (about 30 nm), followed by an indium tin oxide (ITO) layer of 130 nm thickness were prepared. Indium tin oxide (ITO) films were prepared using a custom RF magnetron sputter chamber from a 100 mm diameter, 5 mm thick ITO ceramic target (90 wt % In2O3, 10 wt % SnO2) using gas flows of argon (14 sccm) and oxygen (2 sccm), controlled using mass flow controllers, to achieve a working gas pressure of 2.8 mTorr. The substrate temperature was held at 150° C. during deposition. A strip of Kapton tape (1 mm×5 mm) was applied to mask an area of the sample. A 178 nm thick layer of silicon nitride was sputter-deposited over the ITO and the tape. The silicon nitride was deposited via reactive sputtering using a boron-doped silicon target and a 50:50 Ar:N2 gas ratio. The pressure during deposition was controlled at 4.0 mTorr, the power is set at 140 W and the chamber platen was in rotational m...
example 2
[0069]Onto three (3) 1″×1″ pieces of soda-lime glass were sputter-deposited a thin film of aluminum (about 30 nm). A strip of Kapton tape (1 mm×5 mm) was applied to mask an area of each sample. A 150 nm thick layer of silicon nitride was sputter-deposited over the aluminum and the tape for each sample using identical conditions to those described in Example 1. The strips of tape were then carefully removed to expose the bare aluminum layer underneath silicon nitride. For each sample, a mask was applied to cover the whole substrate with the exception of a rectangular surface slightly larger than that of the exposed aluminum. Layers of Ni followed by Ag having a total thickness of about 1600 nm were evaporated over the mask using the conditions described in Example 1, thus depositing a conductive grid, which covered the exposed aluminum completely.
[0070]The samples were then placed in a pressure vessel at 115° C. / 100% relative humidity and 12 psig for accelerated exposure testing. Opt...
example 3
[0071]On a 1″×1″ (about 2.5 cm×2.5 cm) piece of soda-lime glass were sputter-deposited a thin film of aluminum (about 30 nm), followed by an indium tin oxide (ITO) layer of 130 nm thickness. Two strips of Kapton tape (1 mm×5 mm each) were applied to mask two distinct areas of the sample. A 150 nm thick layer of silicon nitride was sputter-deposited over the ITO and both strips of tape using the same chamber and conditions as described in Example 1. The strips were then carefully removed to expose the bare ITO layer underneath silicon nitride. A mask was applied to cover the whole sample with the exception of one rectangular surface slightly larger than that of one of the exposed ITO areas. Sequential layers of Ni followed by Ag having a total thickness of 1600 nm were evaporated under the conditions described in Example 1 over the mask, thus depositing a conductive grid, which covers one of the exposed areas of ITO completely.
[0072]Conductivity measurements demonstrate that conducti...
PUM
| Property | Measurement | Unit |
|---|---|---|
| temperature | aaaaa | aaaaa |
| diameter | aaaaa | aaaaa |
| diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More