Chemical mechanical polishing conditioner with high performance

Abstract

The present invention relates to a chemical mechanical polishing conditioner with high performance, comprising a substrate; a binding layer disposed on the substrate; and a plurality of abrasive particles fixed directly on the substrate by the binding layer, or each abrasive particle disposed on a metal fixing seat and the substrate have a plurality of blind holes and a plurality of through holes, so that the metal fixing seats are installed into the blind holes or the through holes, and the metal fixing seat fixed on the substrate by the binding layer; wherein the abrasive particles are treated by a surface processing treatment to make the abrasive particles have specific cutting edge angles, crystal structures, tip heights, or tip orientations. Therefore, the present invention can control the profile of each abrasive particle to accomplish the best polishing performance.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims the benefits of the Taiwan Patent Application Serial Number 103105288, filed on Feb. 18, 2014, the subject matter of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a chemical mechanical polishing conditioner, and more particularly to a chemical mechanical polishing conditioner including a plurality of abrasive particles which are performed surface treatments.[0004]2. Description of Related Art[0005]Chemical mechanical polishing (CMP) is a common polishing process in various industries, which can be used to grind the surfaces of various articles, including ceramics, silicon, glass, quartz, or a metal chip. In addition, with the rapid development of integrated circuits, chemical mechanical polishing becomes one of the common techniques for wafer planarization because it can achieve an object of whole planarization.[0006]During ...

AI Technical Summary

Benefits of technology

[0010]An object of the present invention is to provide a chemical mechanical polishing conditioner with high performance, which is used to control profiles of each abrasive particle to achieve an optimum ability of cutting. Besides, the abrasive particles can avoid limitations of their crystal form based on a condition of profiles of each abrasive particle to obtain an optimum cutting edge angle.

[0011]To achieve the above object, the present invention provides a chemical mechanical polishing conditioner with high performance, comprising: a substrate; a binding layer disposed on the substrate; and a plurality of abrasive particles fixed directly on the substrate by the binding layer, or each abrasive particle disposed on a metal fixing seat; wherein the substrate have a plurality of blind holes or a plurality of through holes, so that the metal fixing seats are installed into the blind holes or the through holes, and the metal fixing seat are fixed on the substrate by the binding layer; wherein the abrasive particles are treated by a surface processing treatment, so that the abrasive particles have specific cutting edge angles, crystal structures, tip heights, or tip orientations. Further, the cutting edge angles, crystal structures, tip heights, or tip orientations may be randomly varied based on the user's requirements or processing conditions; alternatively, the abrasive particles are not treated by a surface processing treatment, so that the abrasive particles are formed by a specific ration or a specific arrangement to control the surface characteristics of the polishing pad. The present invention is different form a traditional chemical mechanical polishing conditioner of which the polishing performance are limited to their crystal forms, such as hexoctahedron, of the abrasive particles (artificial diamonds or synthetic diamond). The chemical mechanical polishing conditioner with high performance of the present invention can be designed to the abrasive particles with specific profiles, so that the polishing performance is not limited to their crystal forms, such as hexoctahedron.

[0019]Another object of the present invention is to provide a method for manufacturing chemical mechanical polishing conditioner with high performance, the method for manufacturing chemical mechanical polishing conditioner may control the figures of each abrasive particle to achieve the optimum ability of cutting. Besides, theses abrasive particles can avoid limitations of theirs crystal forms based on a condition of profiles of a single abrasive particle to obtain an optimum cutting edge angle.

[0020]To achieve the above object, the present invention is to provide a method for manufacturing chemical mechanical polishing conditioner with high performance, comprising: providing a plurality of abrasive particles and a substrate having a binding layer; providing a surface processing treatment to make the abrasive particles have specific cutting edge angles, crystal structures, tip heights, or tip orientations. Further, each abrasive particle may be fixed on the substrate by the binding layer; alternatively, each abrasive particle is disposed on the metal fixing seat and the metal fixing seat is fixed on the substrate by the binding layer.

Problems solved by technology

When the polishing pad has been used for a certain period of time, the polishing performance and efficiency are reduced because the debris produced in the polishing process may accumulate on the surface of the polishing pad.

But, the abrasive particles of the above-mentioned chemical mechanical polishing conditioner are limited to their crystal forms, such as hexoctahedron, so that cutting edge angles of the abrasive particles cannot avoid the fixing cutting edge angles due to their structures.

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