Image sensor, optoelectronic system comprising said image sensor, and method for manufacturing said image sensor

an optoelectronic system and image sensor technology, applied in the field of image sensors, can solve the problems of reducing the effective frame rate of the image sensor, blurring effects, and increasing the design requirements of the readout circuit, and achieve the effect of increasing the response of the photosensitive element as described in the claims, and enhancing the respons

an optoelectronic system and image sensor technology, applied in the field of image sensors, can solve the problems of reducing the effective frame rate of the image sensor, blurring effects, and increasing the design requirements of the readout circuit, and achieve the effect of increasing the response of the photosensitive element as described in the claims, and enhancing the respons

US20160366354A1Active Publication Date: 2016-12-15FUNDACIO INST DE CIENCIES FOT NIQUES

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  • Image sensor, optoelectronic system comprising said image sensor, and method for manufacturing said image sensor
  • Image sensor, optoelectronic system comprising said image sensor, and method for manufacturing said image sensor
  • Image sensor, optoelectronic system comprising said image sensor, and method for manufacturing said image sensor

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[0194]In FIG. 1a it is illustrated a top plan view of a block diagram of an embodiment of the image sensor according to present invention. In particular the image sensor 100 comprises a plurality of pixels 101 arranged as a two-dimensional array of M rows and N columns. The plurality of pixels 101 are operatively connected to a control unit that includes a biasing circuit 103 for biasing the plurality of pixels 101 and a readout circuit 102 for selectively reading out the photo-signals generated by the light impinging on the plurality of pixels 101.

[0195]As it can be better seen in the cross-sectional view of FIG. 1b, the image sensor 100 comprises a monolithic three-dimensional integrated circuit 104 comprising an upper level 105 having a first plurality of stacked layers and a lower level 106, disposed underneath the upper level, having a second plurality of stacked layers.

[0196]Each pixel 101 of the plurality of pixels comprises a photosensitive element 107 arranged at a selected...

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Abstract

The invention relates to an image sensor comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit, characterized in that it comprises a monolithic three-dimensional integrated circuit comprising an upper level and a lower level; wherein each pixel comprises: a photosensitive element arranged in said upper level and comprising a photosensitizing layer associated to a transport layer; an active device arranged in said lower level and operatively coupled to the photosensitive element; and a first intermediate terminal and an output terminal circuitally connected, respectively, to the photosensitive element and to the readout circuit; wherein the image sensor further comprises a dark current suppressing circuit; and wherein the control unit is configured to, upon readout of a pixel, circuitally connect the first intermediate terminal of said pixel with its output terminal through the dark current suppressing circuit. The invention also relates to an optoelectronic system comprising said image sensor and to a method of manufacturing said image sensor.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application is based on and claims priority to European Patent Application Serial No. 15171314.6, filed Jun. 10, 2015, the disclosure of which is incorporated by reference herein in its entirety.FIELD OF THE INVENTION[0002]The present invention relates to the field of image sensors, in particular image sensors comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit for selectively reading out the plurality of pixels. An image sensor according to the present invention achieves a simple and efficient integration of the plurality of pixels with the control unit in a small footprint, leading to a compact integrated circuit architecture, and attains an improved pixel sensitivity. Moreover, the particular pixel design of the image sensor of the invention makes it possible to obtain pixels with high photoconductive gain, enhanced responsivity, and / or short response time. The present invention ...

Claims

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Application Information

Patent Timeline
15 Dec 2016
Publication
US20160366354A1
IPC
H04N5/361; H04N5/374; H04N5/378; H01L27/146
CPC
H04N5/361; H01L27/14689; H01L27/14643; H04N5/378; H01L27/14636; H04N5/374; H01L27/14612; H01L27/146
Inventors
KONSTANTATOS, GERASIMOS; KOPPENS, FRANK