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Perovskite surface defect passivation using zwitterionic amino acids

a technology of zwitterionic amino acids and surface defects, applied in the field of photodetector systems and methods, can solve the problems of reducing the efficiency and stability of oihp devices such as solar cells, and achieve the effects of effective passivating both cationic and anionic defects, reducing the density of charge traps, and prolonging the lifetime of carrier recombination

Inactive Publication Date: 2019-05-30
BOARD OF RGT UNIV OF NEBRASKA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a method for improving the efficiency and stability of organic-inorganic halide perovskites (OIHPs) films used in solar cells. The method involves using quaternary ammonium halides (QAHs) to effectively passivate both negative and positive defects in the film. This reduces the charge trap density and elongates the carrier recombination lifetime, resulting in higher efficiency and stability of the solar cells. The defect healing also enhances the stability of the OIHP films. Overall, this patent provides a new solution for defects passivation in OIHPs devices and improves their efficiency and stability.

Problems solved by technology

The ionic defects at the surfaces and grain boundaries of organic-inorganic halide perovskites (OIHPs) films are detrimental to both the efficiency and stability of OIHP devices such as solar cells.

Method used

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  • Perovskite surface defect passivation using zwitterionic amino acids
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  • Perovskite surface defect passivation using zwitterionic amino acids

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Embodiment Construction

[0035]The history of power conversion efficiency (PCE) enhancement for thin-film and polycrystalline photovoltaic cells has witnessed the importance of reducing charge recombination loss both inside the photoactive layer and at the electrode contacts. Passivation of defects at the film surface becomes critical when the charge recombination inside the photoactive layer is negligible, which is the case for the organic-inorganic halide perovskite (OIHP) devices such as solar cells. Solution-processed OIHP devices embrace many intriguing optoelectronics attributes, such as strong light absorption, high charge carrier mobility, and long intrinsic carrier recombination lifetime. The insensitivity to point defects and easy crystallization of OIHP materials give rise to negligible charge recombination in perovskite polycrystalline thin films. However, the much shorter measured photoluminescence (PL) recombination lifetime of the polycrystalline films than the intrinsic carrier recombination...

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Abstract

Semiconductor devices including a cathode layer, an anode layer, an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer, and a passivation layer disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a zwitterionic amino acid, such as valine or phenylalanine or other amino acid that passivates both cationic and anionic defects in the surface of the active layer.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present Application for Patent is a continuation-in part of, and claims priority to, U.S. International Patent Application No. PCT / US2018 / 018706 by Huang et al., entitled “Passivation of Defects in Perovskite Materials For Improved Solar Cell Efficiency and Stability,” filed Feb. 20, 2018, which claims the benefit of U.S. Provisional Patent Application No. 62 / 460,266, filed Feb. 17, 2017, entitled “Passivation of Defects in Perovskite Materials For Improved Solar Cell Efficiency and Stability,” each of which is incorporated in its entirety herein by reference.FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT[0002]This invention was made with government support under 01A1538893 and DMR1420645 awarded by the National Science Foundation and FA9550-16-1-0299 awarded by the Air Force Office of Scientific Research. The government has certain rights in the invention.BACKGROUND AND SUMMARY[0003]The present disclosure generally provides photodetecto...

Claims

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Application Information

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IPC IPC(8): H01G9/20H01G9/00H01L51/00H01L51/42H01L51/44
CPCH01G9/2009H01G9/0036H01G9/2018H01L51/0003H01L51/4253H01L51/442H01L51/448H01L51/0077H01L51/0046H01L2251/308H01L2251/301Y02E10/542Y02E10/549H10K85/211H10K30/20H10K85/50H10K30/10H10K30/50H01G9/2059H10K30/30H10K30/82H10K30/88H10K71/12H10K85/30H10K85/111H10K85/6572H10K2102/00H10K2102/103
Inventor ZENG, XIAO CHENGHUANG, JINSONGJUN, DAIYANG, SHUANG
Owner BOARD OF RGT UNIV OF NEBRASKA
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