Single electron device, method of manufacturing the same, and method of simultaneously manufacturing single electron device and MOS transistor

a single electron and transistor technology, applied in the field of single electron devices, can solve problems such as unsuitable mass production, and achieve the effect of effective formation of silicon nano dots

Inactive Publication Date: 2006-08-29
ELECTRONICS & TELECOMM RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012]Therefore, to solve the above-mentioned problems, it is an object of the present invention to effectively form silicon nano dots as electron islands of single electron devices.
[0013]It is another object of the present invention is to provide a single electron device and a method of manufacturing the same, the single electron device being easily mass produced and being compatible with a conventional MOS transistor manufacturing process.

Problems solved by technology

In current state of nanofabrication technique, it is only the electron beam direct lithography method to meet such a stringent requirement for sub-10 nm scale lithography, but it is not suitable for mass production.

Method used

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  • Single electron device, method of manufacturing the same, and method of simultaneously manufacturing single electron device and MOS transistor
  • Single electron device, method of manufacturing the same, and method of simultaneously manufacturing single electron device and MOS transistor
  • Single electron device, method of manufacturing the same, and method of simultaneously manufacturing single electron device and MOS transistor

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Embodiment Construction

[0030]Hereinafter, an embodiment of a method of simultaneously manufacturing a single electron transistor and an MOS transistor using hemisphere-type silicon forming technologies with reference to FIGS. 3, 4A, and 4B to 11A, and 11B will be explained. However, the single electron transistor does not need to be manufactured with the MOS transistor at the same time, and it can be individually manufactured.

[0031]Referring to FIG. 3, an SOI (silicon on insulator) substrate is shown as an example of a semiconductor substrate. A typical SOI substrate is formed by stacking a single crystalline semiconductor layer 330 and an insulating film 320 in this order on a supporting substrate 310 formed of a silicon substrate. However, although the SOI substrate is shown as an example in the present embodiment, single crystalline semiconductor substrate such as general silicon wafers and various compound semiconductors can be used for the SOI substrate. The upper part of FIG. 3 is a plain view of th...

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Abstract

Disclosed is to a single electron device, a method of manufacturing the same, and a method of simultaneously manufacturing a single electron device and an MOS transistor. Accordingly, the single electron device of the present invention comprises, on a substrate, semiconductor layers in which a source region and a drain region spaced a predetermined distance apart are formed, hemisphere-type silicon layer formed between the semiconductor layers as an active layer, the hemisphere-type silicon layer having a plurality of electron islands, a gate insulating layer formed on a top surface of the entire structure, and a gate electrode formed on the gate insulating layer in order to apply voltage to the active layer.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a single electron device, and more particular, to a single electron device where electron islands are effectively formed using HSG (Hemi-spherical grained) silicon process, a method of manufacturing the same, and a method of simultaneously manufacturing a single electron device and an MOS transistor.[0003]2. Description of the Prior Art[0004]A single electron device is an ultimate structure of electronic device which can be controlled with one electron. Based on a transistor concept, single electron devices having a structure similar to an FET (Field Effect Transistor) have already been proposed and researched for implementing ultra high integrated memories or super low-power consumption circuits. In addition, various element structures and circuits with a new concept have been researched.[0005]Hereinafter, operation principles of a single electron device will be explained with reference...

Claims

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Application Information

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IPC IPC(8): H01L21/84H01L27/088H01L21/335H01L21/336H01L21/8234H01L29/66H01L29/76H01L29/772H01L29/78H01L29/786
CPCB82Y10/00H01L29/7613H01L29/66439H01L29/772
InventorKANG, TAE WOONGLEE, SEONG JAE
OwnerELECTRONICS & TELECOMM RES INST