Active matrix LCD device with image signal lines having a multilayered structure
a multi-layered structure and active matrix technology, applied in non-linear optics, instruments, optics, etc., can solve the problems of increasing the probability of wiring faults, reducing the manufacturing cost of tft substrates, etc., to achieve high aperture ratio, high production yield, and large screen size
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embodiment 1
(Embodiment 1)
[0071]FIG. 1 is a cross-sectional view showing the structure of the matrix portion (display portion) of a display panel in a liquid-crystal display device of active matrix type according to the present invention. This display panel comprises a TFT substrate 10 having on one side surface of a first insulator substrate 100 made of a transparent glass plate or the like thin film transistors TFT, pixel electrodes EP, various kinds of wiring and so on, a counter substrate 20 having on one side surface of a second insulator substrate 200 made of another transparent glass plate or the like counter electrodes EC, a color filter 204, a shielding film 203, and a liquid-crystal layer 300 filled between the both substrates facing to each other.
[0072]The elector-optical state of the liquid-crystal layer 300 between the pixel electrode EP and the counter electrode EC is controlled by applying an image signal voltage between the both electrodes to change the light transferring state ...
embodiment 2
(Embodiment 2)
[0134]The second embodiment according to the present invention will be described, referring to FIG. 18.
[0135]FIG. 18 is a cross-sectional view showing two image signal bus-lines Y adjacent to each other and in area therebetween, and corresponds to FIG. 4 in Embodiment 1.
[0136]The different point in this embodiment from Embodiment 1 is that the conductive film g made of Cr is not provided under the image signal bus-line Y, the image signal bus-line Y being constructed by forming an insulating film 104 made of silicon nitride and an i-type semiconductor layer 105 directly on a silicon oxide 101 formed on a transparent glass substrate 100 in nearly the same pattern, further successively laminating on it an n+-type semiconductor layer 106, a first conductive film d1 made of metal silicide (MoSi in this embodiment) and a second conductive film d2 made of ITO transparent conductive film. The first conductive film d1 is a metal silicide formed on the n+-type semiconductor lay...
embodiment 3
(Embodiment 3)
[0148]The third embodiment according to the present invention will be described, referring to FIG. 19 and FIG. 20. FIG. 19 is a cross-sectional view showing two image signal bus-lines Y adjacent to each other and an area therebetween, and corresponds to FIG. 4 in Embodiment 1. FIG. 20 is a view showing one process among the manufacturing processes for the liquid-crystal display device according to the present invention and a cross-sectional view showing a thin film transistor TFT and a gate terminal GTM portion. This figure corresponds to FIG. 14 in Embodiment 1.
[0149]In Embodiment 1, the first conductive layer d1 made of MoSi film is formed on the upper portion of the n+-type semiconductor layer 106 and the side surface of the i-type semiconductor layer 105 (FIG. 4, FIG. 14). In this embodiment, the first conductive layer d1 is formed only on the upper portion of the n+-type semiconductor layer 106 and not formed on the side surface of the i-type semiconductor layer 1...
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Abstract
Description
Claims
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