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Semiconductor device miniature radiator

A technology for semiconductors and heat sinks, applied in the field of micro heat sinks for semiconductor devices, can solve the problems of expensive processing equipment, difficult production costs, and complicated processes, and achieve the effects of easy physical deposition methods, good heat dissipation effects, and wide application range

Inactive Publication Date: 2007-10-03
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the processing equipment required for this kind of micro radiator is expensive, the process is extremely complicated, and the production cost is unacceptable, so the practical application is greatly restricted.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The present invention is composed of a single metal layer, the single metal layer is a Cu metal layer, and the Cu metal layer is a micro-nano needle-like crystal array structure.

[0014] The needle-shaped crystal has a height of 0.05-0.4 micrometers and a bottom diameter of 0.05-0.2 micrometers. The heat dissipation effect of the heat sink is determined to be higher than that of the copper flat heat sink usually pasted on the back of the chip.

Embodiment 2

[0016] The present invention is composed of two layers of single metal, the bottom layer is a Cu metal layer, and above the Cu metal layer is a Ni metal layer, the two metal layers are bonded by metal bonding, and the Ni metal layer is a micro-nano needle-like crystal cloth Array structure.

[0017] The needle-shaped crystal has a height of 0.05-0.4 micrometers and a bottom diameter of 0.05-0.2 micrometers. The heat dissipation effect of the heat sink is determined to be higher than that of the copper flat heat sink usually pasted on the back of the chip.

Embodiment 3

[0019] The present invention is composed of two layers of single metal, the bottom layer is a Ni metal layer, and above the Ni metal layer is an Au metal layer, the two metal layers are bonded by metal bonding, and the Ni metal layer is a micro-nano needle-like crystal cloth Array structure.

[0020] The needle-shaped crystal has a height of 0.4-0.8 micrometers and a bottom diameter of 0.1-0.3 micrometers. The heat dissipation effect of the heat sink is determined to be much higher than that of the copper flat heat sink usually pasted on the back of the chip.

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Abstract

Disclosed is a semiconductor micro radiator. The invention comprises one or more metal layers that comprises monometal layer or alloy layer. The monometal can be one of Cu, Ni, Co, Fe, Sn, Cr, Al, Ag, Au, Pd or Pt. the said alloy comprises two or more said monometal. At least one layer of said monometal layer or alloy layer is micro nanometer needle-shaped crystal, if more than one metal layers, then metal layers are combined with metallic bonds. The present invention has the advantages of simple structure, good radiation and high radiation efficiency.

Description

Technical field [0001] The invention relates to a device in the technical field of semiconductor microelectronics, specifically, a semiconductor device miniature heat sink. Background technique [0002] Semiconductor microelectronic devices represented by chips, with the continuous improvement of integration and the gradual reduction in volume, the geometric size of electronic equipment that originally occupied a large space has been reduced by orders of magnitude, but the volumetric heat flux has increased However, the trend is extremely fast, and the heat flux required for cooling of ultra-large-scale integrated circuits (ULSI) has reached the order of magnitude of the heat flux in the core of a light water furnace reactor. As far as the computer field is concerned, the current CPU’s heat generation has increased from a few tens of watts a few years ago to 70~80W, and the heat flow density conducted through the heat sink substrate has reached 10 4 ~10 5 w / m 2 . For microelectro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/36G06F1/20
Inventor 李明凌惠琴汪红毛大立
Owner SHANGHAI JIAOTONG UNIV