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Method of in-situ depositing high dielectric constant Al2O3 and metal film on GaN base compound material

A high dielectric constant, metal film technology, applied in the field of microelectronics, can solve the problems of uniform thickness, poor repeatability of thickness between sheets, uneven composition thickness, and lack of precise control, etc., to achieve precise control of film thickness and quality Good, cost-saving effect

Inactive Publication Date: 2007-11-14
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0029] 1) This method cannot form mass production;
[0030] 2) Generated Al 2 o 3 Film thickness cannot be precisely controlled;
[0031] 3) The thickness uniformity of each part in the sheet and the thickness repeatability between sheets are poor;
[0032] 4) Al produced by anodic oxidation 2 o 3 The biggest problem: its composition is not uniform in thickness
[0062] The above two processes require many steps, so the work efficiency is low and the production cost is high. In addition to an EB evaporation table, a DC reactive sputtering table of hundreds of thousands to more than 1 million yuan is required, and dozens of At the same time, due to the existence of harmful gases in the etching, it not only causes harmful pollution to the environment, but also, the film is exposed to the atmosphere 8 times during the processing process, which affects the electrical characteristics of the device, especially the stability of the device. And reliability and pass rate will have a great impact; in addition, use DC reactive sputtering equipment to deposit Al 2 o 3 A large amount of very expensive high-purity gas, such as high-purity Ar, is required, and Al is deposited 2 o 3 The uniformity and repeatability are not very good, the deposition rate and film thickness cannot be directly monitored, and the purpose of precise control cannot be achieved

Method used

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  • Method of in-situ depositing high dielectric constant Al2O3 and metal film on GaN base compound material
  • Method of in-situ depositing high dielectric constant Al2O3 and metal film on GaN base compound material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment l

[0097] On the GaN wafer, evaporate Al first 2 o 3 After evaporating the metal, the metal uses Ni (nickel) and Au (gold), that is, Al first 2 o 3 , after Ni / Au, the specific process is:

[0098] The first step: cleaning the substrate of GaN-based material, and then drying it with N2;

[0099] The second step: photolithography pattern on the cleaned GaN substrate;

[0100] Step 3: Put the photolithographic film into the reaction chamber of the electron beam evaporation table, and vacuumize it to a predetermined value of 1.8×10 -3 Above Pa, activate the GaN substrate surface with argon ions for 30 seconds, and perform Al 2 o 3 Evaporation deposition of films and Ni / Au metal films:

[0101] (1) Carry out Al according to the following process conditions 2 o 3 Evaporation of the film:

[0102] a. Turn on the electronic power supply of the evaporation table, after preheating, turn on the high voltage and set it to 10kv;

[0103] b. Turn ON the switch of the film thickness ...

Embodiment 2

[0126] On GaN-based materials, first evaporate Al 2 o 3 After evaporating the metal, the metal adopts Pt (platinum) and Au (gold), that is, Al first 2 o 3 After Pt / Au, the specific process is as follows:

[0127] The first step: clean the substrate of GaN-based material, and then use N 2 blow dry;

[0128] The second step: photolithography pattern on the cleaned GaN substrate;

[0129] Step 3: Put the photolithographic film into the reaction chamber of the electron beam evaporation table, and vacuumize it to a predetermined value of 1.8×10 -3 Above Pa, activate the GaN substrate surface with argon ions for 30 seconds, and perform Al 2 o 3 Evaporation deposition of films and Pt / Au metal films:

[0130] (1) carry out Al 2 o 3 Conditions for film evaporation:

[0131] a. The electron beam high voltage is still set at 10kv;

[0132] b. Set Al on the film thickness meter 2 o 3 Density D and Z coefficients, namely D: 4.0g / cm 3 Z: 1.00;

[0133] c. Use the controlle...

Embodiment 3

[0150] On the GaN substrate, the metals Ti (titanium), Al (aluminum), Ti (titanium), Au (gold) are evaporated in sequence, and then Al is evaporated. 2 o 3 , that is, the Ti / Al / Ti / Au metal film is evaporated first, and then the Al 2 o 3 In-situ evaporation, the specific process is:

[0151]The first step: clean the substrate of GaN-based material, and then use N 2 blow dry;

[0152] The second step: photolithography pattern on the cleaned GaN substrate;

[0153] Step 3: Put the photolithographic film into the reaction chamber of the electron beam evaporation table, and vacuumize it to a predetermined value of 1.8×10 -3 Above Pa, activate the GaN substrate surface with argon ions for 30 seconds, and perform Ti / Al / Ti / Au metal film and Al 2 o 3 Evaporative deposition of films:

[0154] 1. The conditions for evaporating Ti / Al / Ti / Au metal film in sequence:

[0155] (1) Evaporated Ti film

[0156] a. The vacuum degree of the reaction chamber is maintained at 1.8×10 -3 Abo...

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Abstract

This invention discloses a method for in-situ deposit high dielectric constant Al203 and a metallic film on a GaN compound material, which applies vacuum evaporation of electronic beams, takes over 4N pure Al203 particles and pure metallic film as the source to clean the chip and photoetch the evaporation window, then put the chip in a reaction chamber of an evaporation stand, evaporate the Al203film first under room temperature then the metallic film with the vacuum above 1.8x10-3Pa and bombard the chip with Ar ions, finally to set the density and coefficient of them, set the high voltage of the electronic beam at 10kv and the current is added with different values in terms of the needs, when the thickness of the film reaches to a demanded one, the current is reduced to zero quickly to take out the chip for strip off.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to the process treatment in the manufacture of compound material devices, in particular to an in-situ deposition of high dielectric constant Al on a GaN base. 2 o 3 and new methods for metal films. Background technique [0002] With the requirement of high-speed communication and national defense modernization, the size of semiconductor devices is continuously reduced, and the thickness of the gate oxide layer must also be reduced accordingly. However, when the thickness of the gate oxide layer is less than 2nm, it will cause significant quantum tunneling effect, resulting in gate leakage current that seriously affects device performance. In the case of the same equivalent thickness of the gate dielectric, if a material with a high dielectric constant is used instead of SiO 2 As a gate dielectric, it can significantly reduce the gate leakage current caused by direct tunnel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/283H01L21/768H01L21/316H01L21/3205C23C14/30
Inventor 郝跃谢永桂冯倩王冲龚欣李亚琴
Owner XIDIAN UNIV
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