Method of in-situ depositing high dielectric constant ferric oxide and metal film on indium phosphide material
A high dielectric constant, aluminum oxide technology, applied in the field of microelectronics, can solve the problems of thickness uniformity, poor repeatability of thickness between sheets, uneven thickness, and inability to achieve precise control, and achieve precise control of film thickness, Good quality and cost savings
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Embodiment 1
[0095] On InP wafers, evaporate Al first 2 o3 After evaporating the metal film, the metal film is deposited by two layers of Cr (chromium) and Au (gold) to form a composite metal film, that is, the Al 2 o 3 Evaporate, and then carry out Cr / Au in-situ evaporation, the specific process is:
[0096] In the first step, the substrate of the InP-based material is cleaned and dried at T=120°C for 5 minutes;
[0097] The second step is to photolithographically pattern the cleaned InP substrate;
[0098] In the third step, put the photoetched film into the reaction chamber of the electron beam evaporation table, and vacuumize it to 1.8×10 -3 Above Pa, and use argon ions to activate the surface of the InP substrate for 20 seconds to enhance the adhesion between the steamed object and the sheet, and then carry out Al in accordance with the following process conditions 2 o 3 The evaporation of the film, and then the evaporation of Cr and Au metal films in sequence:
[0099] (1)Al 2...
Embodiment 2
[0123] On InP-based materials, evaporate Al first 2 o 3 , after evaporating Al (aluminum) metal, the specific process is:
[0124] The first step is to clean the substrate of the InP-based material and dry it at T=120°C for 5 minutes; the second step is to photolithographically pattern the cleaned InP substrate;
[0125] In the third step, put the photoetched film into the reaction chamber of the electron beam evaporation table, and vacuumize it to 1.8×10 -3 Above Pa, and use argon ions to activate the surface of the InP substrate for 20 seconds to enhance the adhesion between the steamed object and the sheet, and then carry out Al in accordance with the following process conditions 2 o 3 The evaporation of the film, and then the evaporation of the Al metal film:
[0126] (1)Al 2 o 3 Membrane evaporation conditions
[0127] a, will be equipped with Al 2 o 3 The crucible of the material is placed in the heating position, and the electron gun is placed at a high voltage...
Embodiment 3
[0142] On the InP substrate, the Ge (germanium) / Au (gold) / Ni (nickel) / Au (gold) composite metal film is evaporated in sequence, and then the Al 2 o 3 The in-situ evaporation of the film, the specific process is:
[0143] In the first step, the substrate of the InP-based material is cleaned and dried at T=120°C for 5 minutes;
[0144] The second step is to photolithographically pattern the cleaned InP substrate;
[0145] In the third step, put the photoetched film into the reaction chamber of the electron beam evaporation table, and vacuumize it to 1.8×10 -3 Above Pa, and use argon ions to activate the surface of the InP substrate for 20 seconds to enhance the adhesion between the steamed object and the sheet, and then perform Ge / Au / Ni / Au / Al in sequence according to the following process conditions 2 o 3 Evaporation of the film;
[0146] (1) Conditions for evaporating Ge metal film
[0147] a. The vacuum degree of the reaction chamber is maintained at 1.8×10 -3 Above Pa,...
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